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WPM2081 PDF даташит

Спецификация WPM2081 изготовлена ​​​​«WillSEMI» и имеет функцию, называемую «MOSFET ( Transistor )».

Детали детали

Номер произв WPM2081
Описание MOSFET ( Transistor )
Производители WillSEMI
логотип WillSEMI логотип 

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WPM2081 Даташит, Описание, Даташиты
WPM2081
Single P-Channel, -20V, -3.2A, Power MOSFET
WPM2081
Http://www.sh-willsemi.com
VDS (V)
-20
Typical RDS(on) (m)
43 @ VGS=-4.5V
55 @ VGS=-2.5V
Descriptions
The WPM2081 is P-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS(ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM2081 is Pb-free.
Features
D
S
G
SOT-23
D
3
12
GS
Pin configuration (Top view)
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package SOT-23
Applications
DC/DC converters
Power supply converters circuit
Load/Power Switching for portable device
PB = Device Code
Y = Year
W = Week(A~z)
Marking
Order information
Device
WPM2081-3/TR
Package
SOT-23
Shipping
3000/Tape&Reel
Will Semiconductor Ltd. 1 2016/06/03- Rev.1.0









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WPM2081 Даташит, Описание, Даташиты
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a d
Maximum Power Dissipation a d
Continuous Drain Current b d
Maximum Power Dissipation b d
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
WPM2081
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 s Steady State
-20
±12
-3.2 -2.9
-2.6 -2.3
0.96 0.80
0.62 0.52
-2.9 -2.6
-2.3 -2.1
0.78 0.66
0.50 0.42
-12
-55 to 150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Single Operation
Parameter
Symbol
Junction-to-Ambient Thermal Resistance a t 10 s
Steady State
RθJA
Junction-to-Ambient Thermal Resistance b t 10 s
Steady State
RθJA
Junction-to-Case Thermal Resistance
Steady State RθJC
Typical
105
120
130
145
40
Maximum
130
155
160
190
60
Unit
°C/W
a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR4 board using minimum pad size, 1oz copper
c Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1%
d Repetitive rating, pulse width limited by junction temperature TJ=150°C.
Will Semiconductor Ltd. 2 2016/06/03- Rev.1.0









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WPM2081 Даташит, Описание, Даташиты
Electronics Characteristics (Ta=25oC, unless otherwise noted)
WPM2081
Parameter
Symbol
Test Conditions
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
BVDSS
IDSS
IGSS
VGS = 0 V, ID = -250uA
VDS =-16V, VGS = 0V
VDS = 0 V, VGS = ±12V
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-to-source On-resistance
Forward Transconductance
VGS(TH)
RDS(on)
gFS
VGS = VDS, ID = -250uA
VGS =-4.5V, ID = -3.2A
VGS = -2.5V, ID = -3.0A
VGS = -1.8V, ID = -2.5A
VDS = -5 V, ID = -4A
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
VGS = 0 V, f = 1.0MHz, VDS =
-6 V
VGS = -4.5 V, VDS = -10 V,
ID =-3.3 A
SWITCHING CHARACTERISTICS
Turn-On Delay Time
td(ON)
Rise Time
Turn-Off Delay Time
tr
td(OFF)
VGS = -4.5 V, VDS =-6 V,
ID=-3.3A, RG=6
Fall Time
tf
BODY DIODE CHARACTERISTICS
Forward Voltage
VSD VGS = 0 V, IS = -3.2A
Min
-20
-0.35
Typ
-0.65
43
55
72
6
1062
146
124
10
0.8
1.8
1.7
11.4
6.8
67.6
16.8
-0.8
Max Unit
-1
±100
V
uA
nA
-1 V
65
81 m
110
16 S
pF
nC
ns
-1.5 V
Will Semiconductor Ltd. 3 2016/06/03- Rev.1.0










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