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Datasheet WPM2049 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | WPM2049 | MOSFET, Transistor WPM2049
Single P-Channel, -20V, -0.51A, Power MOSFET
VDS (V) -20
Typical Rds(on) (Ω) 0.480@ VGS=-4.5V 0.620@ VGS=-2.5V 0.780@ VGS=-1.8V
WPM2049
Http://www.sh-willsemi.com G S
D
Descriptions
The WPM2049 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and de | WillSEMI | mosfet |
2 | WPM2049B | MOSFET, Transistor WPM2049B
Single P-Channel, -20V, -0.51A, Power MOSFET
VDS (V) -20
Typical Rds(on) (Ω) 0.440@ VGS=-4.5V 0.640@ VGS=-2.5V 0.880@ VGS=-1.8V
WPM2049B
Http://www.sh-willsemi.com
Descriptions
The WPM2049B is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and desig | WillSEMI | mosfet |
WPM Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | WPM1480 | P-Channel MOSFET WPM1480
WPM1480
Single P-Channel, -20 V, -1.5 A,Power Mosfet
Description
The WPM1480 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product WPM1480 is Pb-free.
Features
9%5' Will Semiconductor mosfet | | |
2 | WPM1481 | Single P-Channel Power MOSFET WPM1481
Single P-Channel, -12V, -5.5A, Power MOSFET
VDS (V) -12
Typical Rds(on) (Ω) 0.022@ VGS=-4.5V 0.030@ VGS=-2.5V 0.045@ VGS=-1.8V
ID (A) -5.5 -4.0 -2.5
Descriptions
The WPM1481 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide exce WillSEMI mosfet | | |
3 | WPM1483 | P-Channel MOSFET WPM1483
Single P-Channel, -12V, -3.5A, Power MOSFET
VDS (V) -12
Typical Rds(on) (Ω) 0.031@ VGS=–4.5V 0.040@ VGS=–2.5V 0.056@ VGS=–1.8V
Descriptions
The WPM1483 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) wi Will Semiconductor mosfet | | |
4 | WPM1485 | P-Channel MOSFET WPM1485
Single P-Channel, -12V, -7.4A, Power MOSFET
VDS (V) -12
Rds(on) (Ω) 0.015@ VGS=–4.5V 0.020@ VGS=–2.5V 0.030@ VGS=–1.8V
Descriptions
The WPM1485 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low Will Semiconductor mosfet | | |
5 | WPM1488 | P-Channel MOSFET WPM1488
Single P-Channel, -12V, -1.4A, Power MOSFET
VDS (V) -12
Typical Rds(on) (Ω) 0.080@ VGS=–4.5V 0.086@ VGS=–3.6V 0.105@ VGS=–2.5V
ID (A) -1.2 -1.0 -1.0
Descriptions
The WPM1488 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide Will Semiconductor mosfet | | |
6 | WPM2005 | Power MOSFET and Schottky Diode WPM2005
WPM2005 Power MOSFET and Schottky Diode
Features
z Featuring a MOSFET and Schottky Diode z Independent Pinout to each Device to Ease Circuit Design
z Ultra Low VF Schottky
Applications
z Li--Ion Battery Charging z High Side DC-DC Conversion Circuits z High Side Drive for Small Brushl WillSEMI mosfet | | |
7 | WPM2005B | Power MOSFET and Schottky Diode WPM2005B
Power MOSFET and Schottky Diode
Features
z Featuring a MOSFET and Schottky Diode z Independent Pinout to each Device to Ease Circuit Design
z Ultra Low VF Schottky
Applications
z Li--Ion Battery Charging z High Side DC-DC Conversion Circuits z High Side Drive for Small Brushless DC Mo WillSEMI mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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