WNMD2180 PDF даташит
Спецификация WNMD2180 изготовлена «WillSEMI» и имеет функцию, называемую «MOSFET ( Transistor )». |
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Детали детали
Номер произв | WNMD2180 |
Описание | MOSFET ( Transistor ) |
Производители | WillSEMI |
логотип |
8 Pages
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WNMD2180
Dual N-Channel, 20V, 11A, Power MOSFET
VDS (V)
20
Typical Rds(on) (mΩ)
8.5@ VGS=4.5V
8.9@ VGS=3.8V
9.6@ VGS=3.1V
11@ VGS=2.5V
ESD Protected
Descriptions
The WNMD2180 is Dual N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNMD2180 is Pb-free and
Halogen-free.
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package PDFN3×3-8L
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
WNMD2180
Http://www.sh-willsemi.com
PDFN3×3-8L
Pin configuration (Top view)
87 65
2180
NDYW
1 234
2180
ND
Y
W
= Device Code
= Special Code
= Year
= Week
Marking
Order information
Device
Package
Shipping
WNMD2180-8/TR PDFN3×3-8L 3000/Reel&Tape
Will Semiconductor Ltd. 1 2016/11/21- Rev.1.1
No Preview Available ! |
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Maximum Power Dissipation a
Continuous Drain Current b
Maximum Power Dissipation b
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
WNMD2180
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 S Steady State
20
±10
11.0 8.2
8.8 6.6
1.7 0.9
1.1 0.6
10.8 7.7
8.6 6.1
1.6 0.8
1.0 0.5
50
-55 to 150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Single Operation
Parameter
Symbol
Junction-to-Ambient Thermal Resistance a t ≤ 10 s
Steady State
RθJA
Junction-to-Ambient Thermal Resistance b t ≤ 10 s
Steady State
RθJA
Junction-to-Case Thermal Resistance
Steady State RθJC
Typical
61
102
65
120
54
Maximum
72
128
75
148
63
Unit
°C/W
a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR4 board using minimum pad size, 1oz copper
c Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1%
d Repetitive rating, pulse width limited by junction temperature TJ=150°C.
Will Semiconductor Ltd. 2 2016/11/21- Rev.1.1
No Preview Available ! |
Electronics Characteristics (Ta=25oC, unless otherwise noted)
WNMD2180
Parameter
Symbol
Test Conditions
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
BVDSS
IDSS
IGSS
VGS = 0 V, ID = 250uA
VDS =16 V, VGS = 0V
VDS = 0 V, VGS = ±10V
Gate Threshold Voltage
VGS(TH)
Drain-to-source On-resistance RDS(on)
Forward Transconductance
gFS
VGS = VDS, ID = 250uA
VGS = 4.5V, ID = 7.0A
VGS = 3.8V, ID = 6.5A
VGS = 3.1V, ID = 6.5A
VGS = 2.5V, ID = 5.5A
VDS = 5.0 V, ID = 7.0A
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
VGS = 0 V, f = 1.0MHz, VDS =
10 V
VGS = 4.5 V, VDS = 10 V,
ID = 7.0 A
Turn-On Delay Time
td(ON)
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(OFF)
tf
VGS = 4.5 V, VDS = 6 V,
ID=4.8A, RG=6 Ω
BODY DIODE CHARACTERISTICS
Forward Voltage
VSD VGS = 0 V, IS = 1.0A
Min
20
0.4
6.5
6.7
7.5
8
Typ Max Unit
V
1 uA
±5 uA
0.7 1.0 V
8.5 11.5
8.9 12.5
9.6 15 mΩ
11 19
17 S
1188
310
142
16.8
1.2
2.0
5.3
pF
nC
29
35
ns
260
125
0.75 1.5 V
Will Semiconductor Ltd. 3 2016/11/21- Rev.1.1
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Номер в каталоге | Описание | Производители |
WNMD2180 | MOSFET ( Transistor ) | WillSEMI |
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