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PDF WNMD2178 Data sheet ( Hoja de datos )
| Número de pieza | WNMD2178 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | WillSEMI | |
| Logotipo |  |
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WNMD2178
WNMD2178
Dual N-Channel, 20V, 6A, Power MOSFET
www.sh-willsemi.com
Vsss (V)
Typ Rss(on) (mΩ)
23.5@ VGS=4.5V
24@ VGS=4.0V
20
26@ VGS=3.1V
29@ VGS=2.5V
ESD Rating:2000V HBM
Descriptions
The WNMD2178 is Dual N-Channel enhancement
MOS Field Effect Transistor and connecting the Drains
on the circuit board is not required because the Drains
of the MOSFET1 and the MOSFET2 are internally
connected. Uses advanced trench technology and
design to provide excellent RSS(ON) with low gate
charge. This device is designed for Lithium-Ion battery
protection circuit. The WNMD2178 is available in
DFN2X2-4L package. Standard Product WNMD2178
is Pb-free and Halogen-free.
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package DFN2X2-4L
34
2
1
Bottom View
DFN2X2-4L
43
S2 G2
2178
NDYW
S1 G1
12
4: Source 2 3: Gate 2
1: Source 1 2: Gate 1
2178 = Device Code
N D =Special Code
Y = Year
W = Week（A~z）
Pin configuration (TOP view)& Marking
Applications
Lithium-Ion battery protection circuit
Order information
Device
WNMD2178-4/TR
Package
DFN2X2-4L
Shipping
3000/Reel&Tape
Will Semiconductor Ltd. 1 July.2015 – Rev. 1.0
1 page  
Typical Characteristics (Ta=25oC, unless otherwise noted)
15
TEST CIRCUIT 5
10
VGS=1.5V
VGS=2.5V
V =3.5V
GS
VGS=10V
VGS=4.5V
60
50
40
WNMD2178
TEST CIRCUIT 5
IS=6A
5
0
0.0 0.2 0.4 0.6 0.8
VSS-Source to Source Voltage-V
SOURCE CURRENT vs.
SOURCE TO SOURCE VOLTAGE
35
TEST CIRCUIT 5
VGS=2.5V
1.0
30 VGS=3.1V
25
VGS=4.0V
V =4.5V
GS
20
5 10 15 20
IS - Source Current(A)
SOURCE TO SOURCE ON-STATE RESISTANCE vs.
SOURCE CURRENT
50
TEST CIRCUIT 5
IS=6.0A
40
30
20
10
-50
VGS=2.5V
VGS=3.1V
VGS=4.0V
VGS=4.5V
0 50 100
T -Channel Temperature-oC
ch
150
SOURCE TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
30
20
0 2 4 6 8 10
VGS-Gate-to-Source Voltage(V)
SOURCE TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1.4
TEST CIRCUIT 3
1.2 IS=250uA
1.0
0.8
0.6
0.4
-50
0 50 100
Tch - Channel Temperature (oC)
150
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
TEST CIRCUIT 7
VGS=0V
f=1kHz
1000
Crss
C
oss
C
iss
100
5 10 15 20
VSS-Source to Source Voltage-V
CAPACITANCE vs. SOURCE TO SOURCE VOLTAGE
Will Semiconductor Ltd. 5 July.2015 – Rev. 1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WNMD2178.PDF ] | |
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