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PDF WNMD2078 Data sheet ( Hoja de datos )
| Número de pieza | WNMD2078 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | WillSEMI | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de WNMD2078 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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WNMD2078
WNMD2078
Dual N-Channel, 20V, 0.48A, Power MOSFET
VDS (V)
20
Rds(on) (Ω)
0.420@ VGS=4.5V
0.580@ VGS=2.5V
0.800@ VGS=1.8V
ESD Protected
Descriptions
The WNMD2078 is Dual N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNMD2078 is Pb-free
and Halogen-free.
Features
● Trench Technology
● Supper high density cell design
● Excellent ON resistance for higher DC current
● Extremely Low Threshold Voltage
● Small package SOT-363
Applications
● Driver for Relay, Solenoid, Motor, LED etc.
● DC-DC converter circuit
● Power Switch
● Load Switch
● Charging
Http//:www.willsemi.com
SOT-363
Pin configuration (Top view)
MA = Device Code
* = Month (A~Z)
Marking
Order information
Device
Package
WNMD2078-6/TR SOT-363
Shipping
3000/Reel&Tape
Will Semiconductor Ltd.
1 Dec , 2015 - Rev.1.0
1 page  
1.0
V =1.8V
0.8 GS
V =2.5V
0.6 GS
V =3.1V
GS
0.4
V =4.5V
GS
0.2
0.0
0.2 0.4 0.6 0.8
IDS-Drain-to-Source Current (A)
On Resistance vs. Drain Current
4 VGS=4.5V, VDS=10V, ID=0.54A
3
2
1
0
0.0 0.4 0.8
Qg (nc)
Total Gate Charge
1.2
WNMD2078
2.0
1.5
1.0
0.5
0.0
1.5
2.0 2.5 3.0 3.5 4.0 4.5
VGS-Gate-to-Source Voltage (V)
5.0
On Resistance vs. VGS
1
0.1
0.01
1E-3
0.1
Limited by R
DS(on)
TA=25oC
Single Pulse
1ms
10ms
100ms
1s
10s
DC
1 10
VDS-Drain-to-Source Voltage (V)
100
Safe operating power
Will Semiconductor Ltd.
5 Dec , 2015 - Rev.1.0
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet WNMD2078.PDF ] | |
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