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WNM3018 PDF даташит

Спецификация WNM3018 изготовлена ​​​​«WillSEMI» и имеет функцию, называемую «MOSFET ( Transistor )».

Детали детали

Номер произв WNM3018
Описание MOSFET ( Transistor )
Производители WillSEMI
логотип WillSEMI логотип 

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WNM3018 Даташит, Описание, Даташиты
WNM3018
Small Signal N-Channel, 30V, 0.2A, MOSFET
VDS (V) Typical Rds(on) (Ω)
1.2@ VGS=10V
30 1.4@ VGS=4.5V
1.9@ VGS=2.5V
ESD Rating: 2000V HBM
Descriptions
The WNM3018 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in small signal switch. Standard Product WNM3018
is Pb-free and Halogen-free.
WNM3018
Http://www.sh-willsemi.com
Pin configuration (Top view)
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
HBM ESD protection >2 kV
Small package SOT-323
Applications
Driver: Relay, Solenoid, Lamps,Hammers etc.
Power supply converters circuit
Load/Power Switching for potable device
18 = Device Code
* = Month (A~Z)
Marking
Order information
Device
WMN3018-3/TR
Package
Shipping
SOT-323 3000/Reel&Tape
Will Semiconductor Ltd.
1 2015/8/10 Rev. 1.0









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WNM3018 Даташит, Описание, Даташиты
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a d
Maximum Power Dissipation a d
Continuous Drain Current b d
Maximum Power Dissipation b d
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
WNM3018
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 S Steady State
30
±20
0.25 0.23
0.20 0.18
0.37 0.31
0.24 0.20
0.22 0.20
0.17 0.16
0.28 0.23
0.18 0.15
1.0
-55 to 150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance a
Junction-to-Ambient Thermal Resistance b
Junction-to-Case Thermal Resistance
t ≤ 10 s
Steady State
t ≤ 10 s
Steady State
Symbol
RθJA
RθJA
Steady State RθJC
Typical
285
340
385
455
260
Maximum
335
405
450
545
300
Unit
°C/W
a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR-4 board using minimum pad size, 1oz copper
c Pulse width<380µs, Duty Cycle<2%
d Maximum junction temperature TJ=150°C.
Will Semiconductor Ltd.
2 2015/8/10 Rev. 1.0









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WNM3018 Даташит, Описание, Даташиты
Electronics Characteristics (Ta=25oC, unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
Drain-to-source On-resistance b, c RDS(on)
Forward Trans conductance
gfs
CAPACITANCES, CHARGES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
CISS
COSS
CRSS
QG(TOT)
QG(TH)
Gate-to-Source Charge
Gate-to-Drain Charge
QGS
QGD
SWITCHING CHARACTERISTICS
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
BODY DIODE CHARACTERISTICS
Forward Voltage
VSD
Test Conditions
VGS = 0V, ID = 250uA
VDS = 24V, VGS = 0V
VDS = 0 V, VGS =±20V
VGS = VDS, ID =250uA
VGS =10V, ID =0.45A
VGS =4.5V, ID = 0.25A
VGS =2.5V, ID = 0.01A
VDS = 15V, ID =0.1A
VGS = 0 V,
F = 1.0 MHz,
VDS = 5 V
VGS = 10 V,
VDD = 30 V,
ID = 0.1 A
VGS = 5 V,
VDD = 5 V,
RL=500 ,
RG=10 ,
ID =10m A
VGS = 0 V, IS = 0.25A
WNM3018
Min Typ Max Unit
30 V
1 uA
±5 uA
0.7 1.0 1.5
1.2 3
1.3 4
1.9 6
0.5
V
S
36
22 pF
12
1.6
0.25
nC
0.4
0.45
8.6
4
ns
23.8
14.2
0.8 1.5 V
Will Semiconductor Ltd.
3 2015/8/10 Rev. 1.0










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