DataSheet26.com

WNM3017 PDF даташит

Спецификация WNM3017 изготовлена ​​​​«WillSEMI» и имеет функцию, называемую «MOSFET ( Transistor )».

Детали детали

Номер произв WNM3017
Описание MOSFET ( Transistor )
Производители WillSEMI
логотип WillSEMI логотип 

8 Pages
scroll

No Preview Available !

WNM3017 Даташит, Описание, Даташиты
WNM3017
Single N-Channel, 30V, 6.2A, Power MOSFET
VDS (V)
30
Typical RDS(on) (m)
17 @ VGS=10V
Descriptions
The WNM3017 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS(ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM3017 is Pb-free.
WNM3017
Http://www.sh-willsemi.com
(6)
(4) (5)
(D)
(S)
(1) (2) (3)
(1)
(2)
(3)
DFN2x2-6L
Features
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package DFN2x2-6L
Applications
DC/DC converters
Power supply converters circuit
Load/Power Switching for portable device
Pin configuration (Top view)
3017
NM
Y
W
= Device Code
= Special Code
= Year
= Week(A~z)
Marking
Order information
Device
Package
Shipping
WNM3017-6/TR DFN2x2-6L 3000/Tape&Reel
Will Semiconductor Ltd. 1 2016/03/07- Rev.1.1









No Preview Available !

WNM3017 Даташит, Описание, Даташиты
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a d
Maximum Power Dissipation a d
Continuous Drain Current b d
Maximum Power Dissipation b d
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
WNM3017
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 s Steady State
30
±20
6.9 6.2
5.5 4.9
1.7 1.4
1.1 0.9
5.5 4.4
4.4 3.5
1.1 0.7
0.7 0.4
30
-55 to 150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Single Operation
Parameter
Symbol
Junction-to-Ambient Thermal Resistance a t 10 s
Steady State
RθJA
Junction-to-Ambient Thermal Resistance b t 10 s
Steady State
RθJA
Junction-to-Case Thermal Resistance
Steady State RθJC
Typical
57
71
89
126
40
Maximum
72
90
115
181
50
Unit
°C/W
a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR4 board using minimum pad size, 1oz copper
c Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1%
d Repetitive rating, pulse width limited by junction temperature TJ=150°C.
Will Semiconductor Ltd. 2 2016/03/07- Rev.1.1









No Preview Available !

WNM3017 Даташит, Описание, Даташиты
Electronics Characteristics (Ta=25oC, unless otherwise noted)
WNM3017
Parameter
Symbol
Test Conditions
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
BVDSS
IDSS
IGSS
VGS = 0 V, ID = 250uA
VDS =24V, VGS = 0V
VDS = 0 V, VGS = ±20V
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-to-source On-resistance
Forward Transconductance
VGS(TH)
RDS(on)
gFS
VGS = VDS, ID = 250uA
VGS =10V, ID = 7A
VGS = 4.5V, ID = 7A
VGS = 3.7V, ID = 4A
VGS = 3.1V, ID = 4A
VDS = 10 V, ID = 7.0A
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
VGS = 0 V, f = 1MHz, VDS = 15
V
VGS = 10 V, VDS = 15 V,
ID =8 A
SWITCHING CHARACTERISTICS
Turn-On Delay Time
td(ON)
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(OFF)
tf
VGS = 10 V, VDS =15 V,
RL=3.75, RG=10
BODY DIODE CHARACTERISTICS
Forward Voltage
VSD VGS = 0 V, IS = 2.5A
Min
30
0.5
Typ Max Unit
1
±100
V
uA
nA
1.0 1.5 V
17 27
21 33
m
23 42
28 48
6 16 S
834
105 pF
93
19.9
0.9
nC
2
3.9
10.6
5.4
ns
45.6
7.6
0.85 1.5 V
Will Semiconductor Ltd. 3 2016/03/07- Rev.1.1










Скачать PDF:

[ WNM3017.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
WNM3011N-Channel MOSFETWill Semiconductor
Will Semiconductor
WNM3013N-Channel MOSFETWill Semiconductor
Will Semiconductor
WNM3017MOSFET ( Transistor )WillSEMI
WillSEMI
WNM3018MOSFET ( Transistor )WillSEMI
WillSEMI

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск