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PDF WCR650N60TG Data sheet ( Hoja de datos )
| Número de pieza | WCR650N60TG | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | WillSEMI | |
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WCR650N60T Series
WCR650N60T/ WCR650N60TF/ WCR650N60TG/ WCR650N60TN
600V N-Channel Super Junction MOSFET
Description
Features
The WCR600N60T series is new generation of high voltage
MOSFET family that is utilizing an advanced charge balance
mechanism for outstanding low on resistance and lower gate
650V@TJ=150°C
Typ.RDS(on)=0.57Ω
Low gate charge(typ. Qg= 9.6nC)
charge performance. This advanced technology has been tai-
lored to minimize conduction loss, provide superior switching
100% avalanche tested
100% Rg tested
performance, and withstand extreme dv/dt rate and higher
avalanche energy. This device is suitable for various AC/DC
power conversion in switching mode operation for higher
efficiency.
Order Information
Device
Package
Marking
Units/Tube
WCR650N60T-3/T
TO-220
WCR650N60TYYWW
50
WCR650N60TF-3/T
TO-220-F
WCR650N60TFYYWW
50
WCR650N60TN-3/T TO-251(IPAK) WCR650N60TGYYWW
70
WCR650N60TG-3/T TO-252E-2 WCR650N60TNYYWW
Note 1: WCR650N60T=Device code ; YY=Year ;WW=Week (A~z);
Note 2: WCR650N60TF=Device code ; YY=Year ;WW=Week (A~z);
Note 3: WCR650N60TG=Device code ; YY=Year ;WW=Week (A~z);
Note 4: WCR650N60TN=Device code ; YY=Year ;WW=Week (A~z);
70
WCR
650N60
TFYYWW
WCR
650N60
TYYWW
WNM
650N60
TNYYWWW
TO-220F
TO-220
TO-251(IPAK)
Absolution Maximum Ratings TA=250C unless otherwise noted
WCR650N60T
Parameter
Symbol WCR650N60TN
WCR650N60TF
WCR650N60TG
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
600
±30
Continuous Drain Current A TC=25°C
TC=100°C
Pulsed Drain Current B
Single Pulsed Avalanche Energy C
Avalanche Current B
Repetitive Avalanche Energy B
ID
IDM
EAS
IAR
EAR
7.3
4.6
16
86
1.7
0.2
Power Dissipation
TC=25°C
Derate above 25°C
PD
62.5
0.5
27.7
0.22
Operating and Storage Temperature Range TJ,TSTG
-55~150
Lead Temperature
Thermal Resistance Ratings
TL
260
Maximum Junction-to-Ambient
RθJA
60
80
Maximum Junction-to-Case
RθJC
2
4.5
WCR
650N60
TGYYWW
TO-252E-2
Unit
V
A
A
mJ
A
mJ
W
W/°C
°C
°C
°C/W
Will Semiconductor Ltd. 1 Jan, 2016 - Rev.1.0
1 page  
WCR650N60T Series
100
10
10ms
1
DC
limited by on-state resistance
0.1
100us 10us
1ms
0.01
1
10 100
V (V)
DS
1000
TO-220 TO-252E-2 TO-251(IPAK)
Safe Operating Area(Note F )
100
10
100us 10us
1 10ms 1ms
limited by on-state resistance
0.1
DC
0.01
1
10 100
V (V)
DS
1000
TO-220F
Safe Operating Area(Note F )
101
0.5
100
0.2
0.1
0.05
0.02
10-1
0.01
single pulse
101
0.5
100 0.2
0.1
0.05
0.02
10-1
0.01
single pulse
10-2
10-5
10-4
10-3
10-2
tp[s]
TO-220 TO-252E-2 TO-251(IPAK)
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp[s]
TO-220F
Transient thermal response (Junction-to-Case)(Note F)
Will Semiconductor Ltd. 5 Jan, 2016 - Rev.1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WCR650N60TG.PDF ] | |
Hoja de datos destacado
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| WCR650N60TN | MOSFET ( Transistor ) | WillSEMI |
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