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WCM2079 PDF даташит

Спецификация WCM2079 изготовлена ​​​​«WillSEMI» и имеет функцию, называемую «MOSFET ( Transistor )».

Детали детали

Номер произв WCM2079
Описание MOSFET ( Transistor )
Производители WillSEMI
логотип WillSEMI логотип 

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WCM2079 Даташит, Описание, Даташиты
WCM2079
N- and P-Channel Complementary, 20V,MOSFET
VDS (V)
Typical RDS(on) ()
N-Channel
20
P-Channel
-20
0.020@VGS=10V
0.023@VGS=4.5V
0.028@VGS=-10V
0.035@VGS=-4.5V
Descriptions
The WCM2079 is the N-Channel and P-Channel
enhancement MOS Field Effect Transistor as a
single package for DC-DC converter or level shift
applications, uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. Standard Product WCM2079 is Pb-free and
Halogen-free.
WCM2079
http://www.sh-willsemi.com
(4)
(3)
(2)
(1)
SOP-8L
Pin configuration (Top View)
Features
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Package SOP-8L
Applications
Driver: Relays, Solenoids, Lamps, Hammers
Power supply converters circuit
Load/Power Switching for portable device
2079 = Device Code
NP = Special Code
YW = Date Code
Marking
Order Information
Device
Package
Shipping
WCM2079-8/TR SOP-8L 2500/Tape&Reel
Will Semiconductor Ltd.
1
2016/5/20 - Rev.1.0









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WCM2079 Даташит, Описание, Даташиты
Absolute Maximum Ratings (TA=25oC unless otherwise noted)
WCM2079
Symbol Parameter
VDSS
VGSS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current a d
Power Dissipation a d
Continuous Drain Current b d
Power Dissipation b d
TA=25oC
TA=70oC
TA=25oC
TA=70oC
TA=25oC
TA=70oC
TA=25oC
TA=70oC
Pulsed Drain Current c
Operation junction temperature
Lead Temperature
Storage temperature range
N-Channel
P-Channel
10 s
Steady State
10 s
Steady State
20 -20
±20
±20
6.5 5.1 -6.4 -5.0
5.2 4.1 -5.1 -4.0
1.9 1.2 1.8 1.1
1.2 0.8 1.1 0.7
6.0 4.9 -5.9 -4.8
4.8 3.9 -4.7 -3.8
1.6 1.1 1.5 1.0
1.1 0.7 1.0 0.6
26 -25
-55 to 150
260
-55 to 150
Unit
V
V
A
W
A
W
A
°C
°C
°C
Thermal Resistance Ratings (TA=25oC unless otherwise noted)
Parameter
Junction-to-Ambient Thermal Resistance a
Junction-to-Ambient Thermal Resistance b
Junction-to-Case Thermal Resistance
t 10 s
Steady State
t 10 s
Steady State
Steady State
Symbol
RθJA
RθJA
RθJC
Typical
56
87
64
96
32
Maximum
65
105
76
115
40
Unit
°C/W
a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR4 board using minimum pad size, 1oz copper
c Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1%
d Repetitive rating, pulse width limited by junction temperature TJ=150°C.
Will Semiconductor Ltd.
2
2016/5/20 - Rev.1.0









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WCM2079 Даташит, Описание, Даташиты
WCM2079
Electronics Characteristics (TA=25oC unless otherwise noted)
Symbol Parameter
Test Condition
Min Typ Max Unit
Off Characteristics
V(BR)DSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
VGS=0V, ID=-250uA
N-Ch
P-Ch
20
-20
V
IDSS
Zero Gate Voltage Drain Current
VDS=16V, VGS=0V
VDS=-16V, VGS=0V
N-Ch
P-Ch
1
uA
-1
N-Ch
IGSS
Gate –Source leakage current
VDS=0V, VGS=±20V
P-Ch
±100
±100
nA
ON Characteristics
VGS(th)
Gate Threshold Voltage
VDS= VGS, ID=250uA
VDS= VGS, ID=-250uA
N-Ch
P-Ch
1.0 1.5 2.5
-1.0 -1.5 -2.5
V
VGS=10V, ID=6A
N-Ch
20 31
RDS(on) Drain-Source On-Resistance
VGS=-10V, ID=-5.5A
VGS=4.5V, ID=5.0A
P-Ch
N-Ch
23 35 m
28 41
Dynamic Characteristics
VGS=-4.5V, ID=-5.0A P-Ch
35 45
Ciss Input Capacitance
Coss
Output Capacitance
Nmos
VDS=15V,VGS=0V,
F=1MHz
Pmos
N-Ch
P-Ch
N-Ch
P-Ch
429
1109
81
167
pF
Crss
Reverse Transfer Capacitance
VDS=-15V,VGS=0V,
f=1MHZ
N-Ch
P-Ch
74
140
N-Ch
12
td(on) Turn-On Delay Time
Nmos
P-Ch
27
VDD=5V,VGS=4.5V,
N-Ch
11
tr Turn-On Rise Time
ID=3.0A, RG=3
P-Ch
22
ns
N-Ch
21
td(off) Turn-Off Delay Time
Pmos
P-Ch
VDD=-5V,VGS=-4.5V,
41
tf Turn-Off Fall Time
ID=-3A, RG=3
N-Ch
10
P-Ch
24
BODY DIODE CHARACTERISTICS
VSD Forward Voltage
VGS = 0 V, IS = 1.0A
VGS = 0 V, IS =-1.0A
N-Ch
P-Ch
0.75
-0.75
1.5
-1.5
V
Will Semiconductor Ltd.
3
2016/5/20 - Rev.1.0










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