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WPM1483 PDF даташит

Спецификация WPM1483 изготовлена ​​​​«Will Semiconductor» и имеет функцию, называемую «P-Channel MOSFET».

Детали детали

Номер произв WPM1483
Описание P-Channel MOSFET
Производители Will Semiconductor
логотип Will Semiconductor логотип 

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WPM1483 Даташит, Описание, Даташиты
WPM1483
Single P-Channel, -12V, -3.5A, Power MOSFET
VDS (V)
-12
Typical Rds(on) (Ω)
0.031@ VGS=4.5V
0.040@ VGS=2.5V
0.056@ VGS=1.8V
Descriptions
The WPM1483 is P-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit . Standard Product WPM1483 is Pb-free
and Halogen-free.
Features
WPM1483
Http//:www.sh-willsemi.com
SOT-23
Pin configuration (Top view)
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package SOT-23
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
W83
W=Willsemi
83= Device Code
*= Month (A~Z)
Marking
Order information
Device
Package
Shipping
WPM1483 -3/TR SOT-23 3000/Reel&Tape
Will Semiconductor Ltd. 1 Aug, 2013 - Rev.1.0









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WPM1483 Даташит, Описание, Даташиты
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a d
Maximum Power Dissipation a d
Continuous Drain Current b
Maximum Power Dissipation b
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
WPM1483
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 S Steady State
-12
±8
-3.5 -3.2
-2.9 -2.5
0.74 0.57
0.47 0.37
-3.4 -2.9
-2.7 -2.3
0.67 0.49
0.43 0.31
-10
150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance a
Junction-to-Ambient Thermal Resistance b
Junction-to-Case Thermal Resistance
Symbol
t ≤ 10 s
Steady State
RθJA
t ≤ 10 s
Steady State
RθJA
Steady State RθJC
Typical
140
180
155
212
63
Maximum
168
216
186
254
78
Unit
°C/W
a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR-4 board using minimum pad size, 1oz copper
c Pulse width<380µs, Duty Cycle<2%
d Maximum junction temperature TJ=150°C.
Will Semiconductor Ltd. 2 Aug, 2013 - Rev.1.0









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WPM1483 Даташит, Описание, Даташиты
Electronics Characteristics (Ta=25oC, unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
Drain-to-source On-resistance b, c RDS(on)
Forward Trans conductance
gfs
CAPACITANCES, CHARGES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
BODY DIODE CHARACTERISTICS
Forward Voltage
VSD
Test Conditions
VGS = 0 V, ID = -250uA
VDS = -10V, VGS = 0V
VDS = 0 V, VGS =±8V
VGS = VDS, ID = -250uA
VGS = -4.5V, ID = -3.5A
VGS = -2.5V, ID = -3.0A
VGS = -1.8V, ID = -2.0A
VDS = -5.0V, ID = -2.0A
VGS = 0 V,
f = 1.0 MHz,
VDS = -10 V
VGS = -4.5 V,
VDD = -10 V,
ID = -3.5A
VGS = -4.5 V,
VDD = -10 V,
RL=3 Ω,
RG=6 Ω
VGS = 0 V, IS = -1.0A
WPM1483
Min Typ Max Unit
-12 V
-1 uA
±1 uA
-0.45
-0.55
31
40
56
8.5
-0.85
37
55
88
V
mΩ
S
1152
253
236
14.6
1.35
2.3
5.7
pF
nC
26
23
ns
68
45
-0.8 -1.5 V
Will Semiconductor Ltd. 3 Aug, 2013 - Rev.1.0










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