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PDF STK551U362A-E Data sheet ( Hoja de datos )
| Número de pieza | STK551U362A-E | |
| Descripción | Intelligent Power Module | |
| Fabricantes | ON Semiconductor | |
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STK551U362A-E
Intelligent Power Module (IPM)
600 V, 10 A
Overview
This “Inverter Power IPM” is highly integrated device containing all High
Voltage (HV) control from HV-DC to 3-phase outputs in a single SIP
module (Single-In line Package). Output stage uses IGBT / FRD
technology and implements Under Voltage Protection (UVP) and Over
Current Protection (OCP) with a Fault Detection output flag. Internal
Boost diodes are provided for high side gate boost drive.
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Function
Single control power supply due to Internal bootstrap circuit for high side
pre-driver circuit
All control input and status output are at low voltage levels directly
compatible with microcontrollers
Built-in dead time for shoot-thru protection
Externally accessible embedded thermistor for substrate temperature
measurement
The level of the over-current protection current is adjustable with the
external resistor, “RSD”
Certification
UL1557 (File Number : E339285)
Specifications
Absolute Maximum Ratings at Tc = 25C
Parameter
Supply voltage
Collector-emitter voltage
Output current
Symbol
VCC
VCE
Io
Conditions
V+ to V-, surge < 500 V
V+ to U, V, W or U, V, W to V-
V+, V-, U, V, W terminal current
V+, V-, U, V, W terminal current at Tc = 100C
Ratings
*1 450
600
±10
±5
Output peak current
Iop
V+, V-, U, V, W terminal current for a Pulse width of 1ms.
±20
Pre-driver voltage
Input signal voltage
FAULT terminal voltage
Maximum power dissipation
VD1,2,3,4
VIN
VFAULT
Pd
VB1 to U, VB2 to V, VB3 to W, VDD to VSS
HIN1, 2, 3, LIN1, 2, 3
FAULT terminal
IGBT per channel
*2 20
0.3 to VDD
0.3 to VDD
30
Junction temperature
Tj
IGBT, FRD
150
Storage temperature
Tstg
40 to +125
Operating case temperature Tc
IPM case temperature
40 to +100
Tightening torque
Case mounting screws
*3 1.0
Withstand voltage
Vis 50 Hz sine wave AC 1 minute
*4 2000
Reference voltage is “VSS” terminal voltage unless otherwise specified.
*1: Surge voltage developed by the switching operation due to the wiring inductance between + and U-(V-, W-) terminal.
*2: Terminal voltage: VD1 = VB1 to U, VD2 = VB2 to V, VD3 = VB3 to W, VD4 = VDD to VSS
*3: Flatness of the heat-sink should be 0.15 mm and below.
*4: Test conditions : AC 2500 V, 1 second.
Unit
V
V
A
A
A
V
V
V
W
C
C
C
Nm
VRMS
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 15 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
December 2016 - Rev. 2
1
Publication Order Number :
STK551U362A-E/D
1 page  
Equivalent Block Diagram
STK551U362A-E
VB3(1)
W,VS3(2)
VB2(5)
V,VS2(6)
VB1(9)
U,VS1(10)
+(13)
DB DB DB
U.V.
U.V.
U.V.
-(16)
RCIN(28)
TH(29)
HIN1(17)
HIN2(18)
HIN3(19)
LIN1(20)
LIN2(21)
LIN3(22)
FAULT(23)
ISO(24)
VDD(25)
VSS(26)
ISD(27)
Shunt- Resistor
Latch time
Level
Shifter
Level
Shifter
Level
Shifter
Logic
Logic
Logic
Thermistor
Latch
Over- Current
VDD- UnderVoltage
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5
5 Page 
The characteristic of thermistor
Parameter
Resistance
Resistance
B-Constant (25 to 50C)
Temperature Range
Symbol
R25
R100
B
STK551U362A-E
Condition
Tc = 25C
Tc = 100C
Min
97
4.93
4165
40
Typ.
100
5.38
4250
-
Max
103
5.88
4335
+125
Unit
kΩ
kΩ
k
C
Fig. 10
Case Temperature(Tc) - TH to Vss voltage characteristic
min
typ
max
Condition
Pull-up resistor = 39 kΩ
Pull-up voltage of TH = 5 V
Case temperature, Tc-degC
Fig. 11
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11
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