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SIF75N080 PDF даташит

Спецификация SIF75N080 изготовлена ​​​​«SI Semiconductors» и имеет функцию, называемую «N-CHANNEL POWER MOSFET».

Детали детали

Номер произв SIF75N080
Описание N-CHANNEL POWER MOSFET
Производители SI Semiconductors
логотип SI Semiconductors логотип 

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SIF75N080 Даташит, Описание, Даташиты
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
SIF75N080
●特点:热阻低 导通电阻低 栅极电荷低,开关速度快 输入阻抗高 符合RoHS规范
FEATURES:■LOW THERMAL RESISTANCE LOW RDS(ON) TO MINIMIZE CONDUCTIVE LOSS LOW GATE
CHARGE FOR FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT
●应用:低压高频逆变电路 同步整流 开关应用
APPLICATION: LOW VOLTAGE,HIGH FREQUENCY INVERTERS SYNCHRONOUS RECTIFICATION
SWITCH APPLICATIONS
●最大额定值(TC=25°C
Absolute Maximum RatingsTc=25°CTO-220/220FP
参数
PARAMETER
符号 额定值
SYMBOL VALUE
单位
UNIT
-源电压
Drain-source Voltage
VDS 80
V
-源电压
gate-source Voltage
VGS ±20
V
漏极电流
Continuous Drain Current
ID 75* A
TC=25
耗散功率
Total Power Dissipation
Ptot
200*
FP:40
W
最高结温
Junction Temperature
存储温度
Storage Temperature
单脉冲雪崩能量
Single Pulse Avalanche Energy
Tj 150
TSTG
-55-175
EAS 500
°C
°C
mJ
VDS=80V
RDS(ON)=8.9mΩ
ID=75A
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数
PARAMETER
符号
SYMBOL
测试条件
TEST CONDITION
最小值
MIN
典型值
TYP
最大值 单位
MAX UNIT
-源击穿电压
Drain-source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
80 85
V
栅极开启电压
Gate Threshold Voltage
VGS(TH)
VGS=VDS, ID=250µA
2
3
4V
-源漏电流
Drain-source Leakage Current
IDSS
VDS =80V,VGS =0V
1 µA
栅极漏电流
Gate-body Leakage
Current (VDS = 0)
-源导通电阻
Static Drain-source On
Resistance
IGSS
RDS(ON)
VGS =±20V
VGS =10V, ID=40A
±100
nA
8.9 11.5 mΩ
跨导
Forwad Transconductance
gFS
VDS =25V, ID=20A
30 S
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
TO-220(FP) 条管装/TUBE PACKING
订货编码/ORDERING CODE
普通塑封料/ Normal Package Material
SIF75N080 TO-220(FP)-TU
无卤塑封料/Halogen Free
SIF75N080
TO-220(FP)-TU-HF
Si semiconductors 2015.8
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SIF75N080 Даташит, Описание, Даташиты
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
参数
PARAMETER
输入电容
Input Capacitance
输出电容
Output Capacitance
反向传输电容
Reverse Transfer Capacitance
导通延迟
Turn -On Delay Time
开启上升时间
Turn -On Rise Time
关断延迟
Turn -Off Delay Time
关断下降时间
Turn -Off Fall Time
栅极电荷
Total Gate Charge
栅源电荷
Gate-to-Source Charge
栅漏电荷
Gate-to-Drain Charge
二极管正向压降
Diode Forward Voltage
反向恢复时间
Reverse Recovery Time
反向恢复电荷
Reverse Recovery Charge
符号
SYMBOL
Ciss
Coss
Crss
Td(on)
Tr
Td(off)
Tf
Qg
Qgs
Qgd
VSD
trr
Qrr
测试条件
TEST CONDITION
VGS = 0V, VDS = 25V
F = 1.0MHZ
VDD=38V, ID
=10A,RL=3.8Ω
VGS = 10V, RG=1Ω
ID =80A, VDS = 60V
VGS = 10V
Tj=25°C, Is=30A
VGS =0V
Tj=25°C,Is=10A
di/dt=100A/μs
产品规格书
Product Specification
SIF75N080
最小值 典型值 最大值 单位
MIN
TYP
MAX UNIT
3700
280
215
20
20
50
15
65
16
24
pF
ns
nC
nC
nC
1.35
100
345
V
ns
nC
●热特性
Thermal Characteristics
参数
PARAMETER
热阻结-
Thermal Resistance Junction-case
热阻结-环境
Thermal Resistance Junction-ambient
符号
SYMBOL
RthJC
RthJA
TO-220
0.89
62.5
最大值
MAX
TO-220FP
3.13
62.5
单位
UNIT
/W
/W
注释(Notes):
以最高结温为限制,基于 TO-220 封装形式,25℃下本产品硅限电流 ID 75A
ID & PD base on maximum allowable junction temperature, calculated upon TO-220 package type is limited to carry
75A at 25.
初始结温=25oC, VDD =40V, VG=10V, L=1mH, RG =25Ω
Starting Tj=25oC, VDD =40V, VG=10V, L=1mH, RG =25Ω.
脉冲测试:脉冲宽度≤ 300μs ,占空比≤ 2%
Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
Si semiconductors 2015.8
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No Preview Available !

SIF75N080 Даташит, Описание, Даташиты
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
● 特性曲线
产品规格书
Product Specification
SIF75N080
1 输出特性曲线, Tc=25
Fig1 Typical Output Characteristics, Tc=25
2 导通电阻与漏极电流的曲线
Fig2 Resistance V.S Drain Current
3 阀值电压与结温度曲线
Fig3 Threshold Voltage V.S Junction Temperature
4 导通电阻与结温度曲线
Fig4 Resistance V.S Junction Temperature
5 典型栅极电荷与栅源电压曲线
Fig5 Typical Gate Charge V.S Gate-to-Source Voltage
6.典型电容与漏源电压的曲线
Fig6 Typical Capacitance V.S Drain-to-Source Voltage
Si semiconductors 2015.8
3










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Номер в каталогеОписаниеПроизводители
SIF75N080N-CHANNEL POWER MOSFETSI Semiconductors
SI Semiconductors

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