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SIF5N60E PDF даташит

Спецификация SIF5N60E изготовлена ​​​​«SI Semiconductors» и имеет функцию, называемую «N-CHANNEL POWER MOSFET».

Детали детали

Номер произв SIF5N60E
Описание N-CHANNEL POWER MOSFET
Производители SI Semiconductors
логотип SI Semiconductors логотип 

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SIF5N60E Даташит, Описание, Даташиты
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
SIF5N60E
●特点:热阻低 开关速度快 输入阻抗高 符合RoHS规范
FEATURES:■LOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE
RoHS COMPLIANT
●应用:电子镇流器 电子变压器 开关电源
APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SUPPLY
●最大额定值(TC=25°C
Absolute Maximum RatingsTc=25°C
参数
PARAMETER
符号
SYMBOL
-源电压
Drain-source Voltage
-源电压
gate-source Voltage
漏极电流
Continuous Drain Current
TC=25
漏极电流
Continuous Drain Current
TC=100
最大脉冲电流
Drain Current Pulsed
VDS
VGS
ID
ID
IDM
耗散功率
Power Dissipation
最高结温
Junction Temperature
存储温度
Storage Temperature
Ptot
Tj
TSTG
单脉冲雪崩能量
Single Pulse Avalanche Energy
EAS
TO-251T/251S/252
额定值
VALUE
单位
UNIT
600 V
±30
V
5.0 A
2.2
20
40
150
-55-150
230
A
A
W
°C
°C
mJ
VDS=600V
RDS(ON)=2.0Ω
ID=5.0A
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数
PARAMETER
符号
SYMBOL
测试条件
TEST CONDITION
最小值
MIN
典型值
TYP
最大值 单位
MAX UNIT
-源击穿电压
Drain-source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
600
V
击穿电压温度系数
Breakdown Voltage Temperature
Coefficient
栅极开启电压
Gate Threshold Voltage
ΔBVDSS/
ΔTj
VGS(TH)
-源漏电流
Drain-source Leakage Current
IDSS
跨导
Forward Transconductance
gfs
ID=250uA, Referenced to
25°C
VGS=VDS, ID=250µA
VDS =600V,
VGS =0V, Tj=25°C
VDS =480V,
VGS =0V, Tj=125°C
VDS =40V, ID=2.5A
2.0
0.65
3.0
V/°C
4.0 V
1 µA
10 µA
S
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
TO-252 251T 251S 条管装/TUBE PACKING
订货编码/ORDERING CODE
普通塑封料
Normal Package Material
无卤塑封料
Halogen Free
SIF5N60E TO-251T-TU
SIF5N60E TO-251T-TU-HF
TO-251S-TU TO-252-TU TO-251S-TU-HF TO-252-TU-HF
TO-252 编带装/TAPE & REEL PACKING
SIF5N60E TO-252-TR
SIF5N60E TO-252-TR-HF
Si semiconductors 2016.3
1









No Preview Available !

SIF5N60E Даташит, Описание, Даташиты
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
产品规格书
Product Specification
SIF5N60E
参数
PARAMETER
栅极漏电流
Gate-body Leakage
Current (VDS = 0)
-源导通电阻
Static Drain-source On
Resistance
输入电容
Input Capacitance
输出电容
Output Capacitance
反向传输电容
Reverse transfer Capacitance
关断延迟
Turn -Off Delay Time
栅极电荷
Total Gate Charge
栅源电荷
Gate-to-Source Charge
栅漏电荷
Gate-to-Drain Charge
二极管正向电流
Continuous Diode Forward
Current
二极管正向压降
Diode Forward Voltage
反向恢复时间
Reverse Recovery Time
反向恢复电荷
Reverse Recovery Charge
符号
SYMBOL
IGSS
RDS(ON)
Ciss
Coss
Crss
Td(off)
Qg
Qgs
Qgd
IS
VSD
trr
Qrr
测试条件
TEST CONDITION
VGS =±30V
VGS =10V, ID=2.5A
VGS = 0V, VDS = 25V
F = 1.0MHZ
VDD=300V, ID =5.0A
RG=25Ω
ID =5.0A, VDS = 480V
VGS = 10V
Tj=25°C, Is=5.0A
VGS =0V
Tj=25°C,If=5.0A
di/dt=100A/μs
最小值
MIN
典型值 最大值 单位
TYP
MAX UNIT
±100
nA
1.5 2.0 Ω
730
25 pF
16
81 ns
15.5 nC
3.9 nC
4.8 nC
5.0 A
1.4 V
365 ns
3.4 uC
●热特性
Thermal Characteristics
参数
PARAMETER
热阻结-
Thermal Resistance Junction-case
热阻结-环境
Thermal Resistance Junction-ambient
符号
SYMBOL
RthJC
RthJA
最大值
MAX
TO-251T/251S/252
3.125
62.5
单位
UNIT
/W
/W
注释(Notes):
脉冲宽度:以最高节温为限制
Repetitive rating: Pulse width limited by maximum junction temperature
初始结温=25oC, VDD =50V, L=10mH, RG =25Ω, IAS=5.0A
Starting Tj=25oC, VDD =50V, L=10mH, RG =25Ω, IAS=5.0A
脉冲测试:脉冲宽度≤ 300μs ,占空比≤ 2
Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
Si semiconductors 2016.3
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SIF5N60E Даташит, Описание, Даташиты
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
● 特性曲线
产品规格书
Product Specification
SIF5N60E
1 输出特性曲线, Tc=25
Fig1 Typical Output Characteristics, Tc=25
2 导通电阻与漏极电流和栅极电压曲线
Fig2 On-Resistance Vs.Drain Current and Gate Voltage
3 导通电阻与温度曲线
Fig3 Normalized On-Resistance Vs.Temperature
4 二极管正向电压曲线
Fig4 Typical Source-Drain Diode Forward Voltage
5 最大漏极电流与壳温曲线
Fig5 Maximum Drain Current Vs.Case Temperature
Si semiconductors 2016.3
6 SIF5N60E 最大安全工作区曲线
Fig6 Maximum Safe Operating Area
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