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SIF1N60EA PDF даташит

Спецификация SIF1N60EA изготовлена ​​​​«SI Semiconductors» и имеет функцию, называемую «N-CHANNEL POWER MOSFET».

Детали детали

Номер произв SIF1N60EA
Описание N-CHANNEL POWER MOSFET
Производители SI Semiconductors
логотип SI Semiconductors логотип 

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SIF1N60EA Даташит, Описание, Даташиты
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
SIF1N60EA
●特点:导通电阻低 开关速度快 输入阻抗高 符合RoHS规范
FEATURES:■LOW ON-RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT
●应用:电子镇流器 电子变压器 开关电源
APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SUPPLY
●最大额定值(TC=25°C
Absolute Maximum RatingsTc=25°C
TO-92/251T/251S/252
参数
PARAMETER
符号
SYMBOL
额定值
VALUE
单位
UNIT
VDS=600V
-源电压
Drain-source Voltage
VDS
600 V
RDS(ON)=11Ω
-源电压
gate-source Voltage
漏极电流
Continuous Drain Current
TC=25
VGS
ID
±30
1.0*
V
A
ID=1.0A
漏极电流
Continuous Drain Current
TC=100
ID
0.6* A
最大脉冲电流
Drain Current Pulsed
IDM
4.0* A
耗散功率
Power Dissipation (TL=25°C)
PD
TO-92:3
TO-251T/251S/252/126:28
W
最高结温
Junction Temperature
Tj
150 °C
存储温度
Storage Temperature
TSTG
-55-150
°C
单脉冲雪崩能量
Single Pulse Avalanche
Energy
EAS
14 mJ
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数
符号
PARAMETER
SYMBOL
测试条件
TEST CONDITION
-源击穿电压
Drain-source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
击穿电压温度系数
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/
ΔTj
ID=250uA, Referenced to
25°C
栅极开启电压
Gate Threshold Voltage
VGS(TH)
VGS=VDS, ID=250µA
-源漏电流
Drain-source Leakage Current
跨导
Forward Transconductance
VDS =600V,
IDSS
VGS =0V, Tj=25°C
VDS =480V,
VGS =0V, Tj=125°C
gfs VDS =40V, ID=0.5A
●订单信息/ORDERING INFORMATION:
最小值
MIN
600
2.0
0.5
典型值
TYP
0.6
最大值
MAX
4.0
25
250
单位
UNIT
V
V/°C
V
µA
µA
S
包装形式/PACKING
TO-92 盒式编带/AMMOPACK
TO-252 251T 251S 条管装/TUBE PACKING
TO-252 编带装/TAPE & REEL PACKING
订货编码/ORDERING CODE
普通塑封料
Nomal Package Material
无卤塑封料
Halogen Free
SIF1N60EA TO-92-AP
SIF1N60EA TO-251T-TU
TO-251S-TU TO-252-TU
SIF1N60EA TO-92-AP-HF
SIF1N60EA TO-251T-TU-HF
TO-251S-TU-HF TO-252-TU-HF
SIF1N60EA TO-252-TR
SIF1N60EA TO-252-TR-HF
Si semiconductors 2016.03
1









No Preview Available !

SIF1N60EA Даташит, Описание, Даташиты
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
参数
PARAMETER
栅极漏电流
Gate-body Leakage
Current (VDS = 0)
-源导通电阻
Static Drain-source On
Resistance
输入电容
Input Capacitance
输出电容
Output Capacitance
反向传输电容
Reverse transfer Capacitance
关断延迟
Turn -Off Delay Time
栅极电荷
Total Gate Charge
栅源电荷
Gate-to-Source Charge
栅漏电荷
Gate-to-Drain Charge
二极管正向电流
Continuous Diode Forward
Current
二极管正向压降
Diode Forward Voltage
反向恢复时间
Reverse Recovery Time
反向恢复电荷
Reverse Recovery Charge
符号
SYMBOL
IGSS
RDS(ON)
Ciss
Coss
Crss
Td(off)
Qg
Qgs
Qgd
IS
VSD
trr
Qrr
测试条件
TEST CONDITION
VGS =±30V
VGS =10V, ID=0.5A
VGS = 0V, VDS = 25V
F = 1.0MHZ
VDD=300V, ID =1.0A
RG= 25Ω
ID =1.0A, VDS = 480V
VGS = 10V
Tj=25°C, Is=0.5A
VGS =0V
Tj=25°C, If=1.0A
di/dt=100A/μs
最小值
MIN
产品规格书
Product Specification
SIF1N60EA
典型值
TYP
最大值 单位
MAX UNIT
±100
nA
8.5 11 Ω
150
25 pF
5.4
13 ns
4.8 nC
0.7 nC
2.7 nC
1.0 A
1.4 V
190 ns
0.53 uC
●热特性
Thermal Characteristics
参数
PARAMETER
符号
SYMBOL
TO-92
热阻结-环境
Thermal Resistance Junction-lead
热阻结-环境
Thermal Resistance Junction-ambient
注释(Notes):
脉冲宽度:以最高节温为限制
RthJL
RthJA
41.67
140.0
Repetitive rating: Pulse width limited by maximum junction temperature
初始结温=25oC, VDD =50V, L=30mH, RG =25Ω, IAS=1.0A
Starting Tj=25oC, VDD =50V, L=30mH, RG =25Ω, IAS=1.0A
脉冲测试:脉冲宽度≤ 300μs ,占空比≤ 2
Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
最大值
MAX
TO-251T/251S/252
4.46
110.0
单位
UNIT
/W
/W
Si semiconductors 2016.03
2









No Preview Available !

SIF1N60EA Даташит, Описание, Даташиты
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
● 特性曲线
产品规格书
Product Specification
SIF1N60EA
1 输出特性曲线, Tc=25
Fig1 Typical Output Characteristics, Tc=25
2 输出特性曲线, Tc=150
Fig2 Typical Output Characteristics, Tc=150
3 归一化导通电阻与温度曲线
Fig3 Normalized On-Resistance Vs.Temperature
4 二极管正向电压曲线
Fig4 Typical Source-Drain Diode Forward Voltage
5 最大漏极电流与壳温曲线
Fig5 Maximum Drain Current Vs.Case Temperature
Si semiconductors 2016.03
3










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SI Semiconductors

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