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SIF15N50C PDF даташит

Спецификация SIF15N50C изготовлена ​​​​«SI Semiconductors» и имеет функцию, называемую «N-CHANNEL POWER MOSFET».

Детали детали

Номер произв SIF15N50C
Описание N-CHANNEL POWER MOSFET
Производители SI Semiconductors
логотип SI Semiconductors логотип 

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SIF15N50C Даташит, Описание, Даташиты
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
SIF15N50C
●特点:热阻低 开关速度快 输入阻抗高 符合RoHS规范
FEATURES:■LOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE
RoHS COMPLIANT
●应用:电子镇流器 电子变压器 开关电源
APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SUPPLY
●最大额定值(TC=25°C
Absolute Maximum RatingsTc=25°C
参数
符号
PARAMETER
SYMBOL
-源电压
Drain-source Voltage
VDS
-源电压
gate-source Voltage
VGS
漏极电流
Continuous Drain Current
TC=25
ID
漏极电流
Continuous Drain Current
TC=100
ID
最大脉冲电流
Drain Current Pulsed
IDM
TO-220/220FP/262/263
额定值
单位
VALUE
UNIT
500 V
±30
V
15 A
11 A
60 A
VDS=500V
RDS(ON)=0.45Ω
ID=15A
耗散功率
Power Dissipation
TO-220:225
Ptot
TO-220FP:50
W
TO-262/263:156
最高结温
Junction Temperature
Tj
150 °C
存储温度
Storage Temperature
TSTG
-55-150
°C
单脉冲雪崩能量
Single Pulse Avalanche Energy
EAS
500 mJ
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数
符号
PARAMETER
SYMBOL
-源击穿电压
Drain-source Breakdown Voltage
BVDSS
测试条件
TEST CONDITION
VGS=0V, ID=250µA
最小值
MIN
600
典型值
TYP
最大值
MAX
单位
UNIT
V
击穿电压温度系数
Breakdown Voltage Temperature
Coefficient
栅极开启电压
Gate Threshold Voltage
-源漏电流
Drain-source Leakage Current
跨导
Forward Transconductance
二极管电压变动率
Reverse Diode dv/dt
ΔBVDSS/
ΔTj
VGS(TH)
IDSS
gfs
dv/dt
ID=250uA, Referenced to
25°C
VGS=VDS, ID=250µA
VDS =500V,
VGS =0V, Tj=25°C
VDS =400V,
VGS =0V, Tj=125°C
VDS =40V, ID=7.5A
ISD≤12A,Tj=25°C
2.0
0.65
11
10
V/°C
4.0 V
1 µA
10 µA
S
V/ns
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
TO-220 条管装/TUBE PACKING
订货编码/ORDERING CODE
普通塑封料/ Normal Package Material
无卤塑封料/Halogen Free
SIF15N50C TO-220-TU
SIF15N50C TO-220-TU-HF
TO-220FP 条管装/TUBE PACKING
SIF15N50C TO-220FP-TU
SIF15N50C TO-220FP-TU-HF
TO-262 263 条管装/TUBE PACKING
TO-263 编带装/TAPE & REEL PACKING
SIF15N50C TO-262-TU
SIF15N50C TO-263-TU
SIF15N50C TO-263-TR
SIF15N50C TO-262-TU-HF
SIF15N50CTO-263-TU-HF
SIF15N50C TO-263-TR-HF
Si semiconductors 2016.3
1









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SIF15N50C Даташит, Описание, Даташиты
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
SIF15N50C
参数
PARAMETER
栅极漏电流
Gate-body Leakage
Current (VDS = 0)
-源导通电阻
Static Drain-source On Resistance
输入电容
Input Capacitance
输出电容
Output Capacitance
反向传输电容
Reverse transfer Capacitance
关断延迟
Turn -Off Delay Time
开启延迟时间
Turn-on delay time
开启上升时间
Rise time
关断下降时间
Fall time
栅极电荷
Total Gate Charge
栅源电荷
Gate-to-Source Charge
栅极开启电荷量
Gate charge at threshold
栅漏电荷
Gate-to-Drain Charge
二极管正向电流
Continuous Diode Forward Current
二极管正向压降
Diode Forward Voltage
反向恢复时间
Reverse Recovery Time
反向恢复电荷
Reverse Recovery Charge
输入阻抗
Gate resistance
●热特性
Thermal Characteristics
符号
SYMBOL
IGSS
RDS(ON)
Ciss
Coss
Crss
Td(off)
Td(on)
Tr
Tf
Qg
Qgs
Qg(th)
Qgd
IS
VSD
trr
Qrr
RG
参数
PARAMETER
符号
SYMBOL
热阻结-
Thermal Resistance Junction-case
热阻结-环境
Thermal Resistance
Junction-ambient
RthJC
RthJA
测试条件
TEST CONDITION
VGS =±30V
VGS =10V, ID=7.5A
VGS = 0V, VDS = 25V
F = 1.0MHZ
VDD=300V, ID =15.0A
RG=25Ω
ID =15.0A, VDS = 480V
VGS = 10V
Tj=25°C, Is=15.0A
VGS =0V
Tj=25°C, If=15.0A
di/dt=100A/μs
最小值 典型值 最大值 单位
MIN TYP MAX UNIT
±100
nA
0.34
2100
180
26
120
49
50
230
45
10
3.9
15
420
4.9
0.45
15.0
1.4
7
Ω
pF
ns
nC
A
V
ns
uC
Ω
TO-220
0.56
62.5
最大值
MAX
TO-262/263
0.80
TO-220FP
2.45
62.5 62.5
单位
UNIT
/W
/W
注释(Notes):
脉冲宽度:以最高节温为限制
Repetitive rating: Pulse width limited by maximum junction temperature
初始结温=25oC, VDD =50V, L=10mH, RG =25Ω, IAS=12A
Starting Tj=25oC, VDD =50V, L=10mH, RG =25Ω, IAS=12A
脉冲测试:脉冲宽度≤ 300μs ,占空比≤ 2
Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
Si semiconductors 2016.3
2









No Preview Available !

SIF15N50C Даташит, Описание, Даташиты
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
● 特性曲线
产品规格书
Product Specification
SIF15N50C
1 输出特性曲线, Tc=25
Fig1 Typical Output Characteristics, Tc=25
2 导通电阻与漏极电流和栅极电压曲线
Fig2 On-Resistance Vs.Drain Current and Gate Voltage
3 导通电阻与温度曲线
Fig3 Normalized On-Resistance Vs.Temperature
4 二极管正向电压曲线
Fig4 Typical Source-Drain Diode Forward Voltage
5 最大漏极电流与壳温曲线
Fig5 Maximum Drain Current Vs.Case Temperature
Si semiconductors 2016.3
6 最大安全工作区曲线
Fig6 Maximum Safe Operating Area
3










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Номер в каталогеОписаниеПроизводители
SIF15N50CN-CHANNEL POWER MOSFETSI Semiconductors
SI Semiconductors

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