SIF6N40D PDF даташит
Спецификация SIF6N40D изготовлена «SI Semiconductors» и имеет функцию, называемую «N-CHANNEL POWER MOSFET». |
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Детали детали
Номер произв | SIF6N40D |
Описание | N-CHANNEL POWER MOSFET |
Производители | SI Semiconductors |
логотип |
6 Pages
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深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET
SIF6N40D
●特点:导通电阻低 开关速度快 输入阻抗高 符合RoHS规范
●FEATURES:■LOW ON-RESISTANCE ■FAST SWITCHING ■HIGH INPUT RESISTANCE
■RoHS COMPLIANT
●应用:电子镇流器 电子变压器 开关电源
●APPLICATION: ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER ■SWITCH MODE POWER SUPPLY
●最大额定值(TC=25°C)
●Absolute Maximum Ratings(Tc=25°C)
参数
PARAMETER
漏-源电压
Drain-source Voltage
栅-源电压
gate-source Voltage
漏极电流
Continuous Drain Current
TC=25℃
漏极电流
Continuous Drain Current
TC=100℃
最大脉冲电流
Drain Current -Pulsed ①
耗散功率
Power Dissipation
最高结温
Junction Temperature
存储温度
Storage Temperature
单脉冲雪崩能量
Single Pulse Avalanche Energy
②
符号
SYMBOL
VDS
VGS
ID
ID
IDM
PD
Tj
TSTG
EAS
额定值
VALUE
400
±30
6.0*
3.6*
24*
TO-220:74
TO-220FP:40
150
-55-150
225
TO-220/220FP
单位
UNIT
V
V
A
A
A
W
°C
°C
mJ
VDS=400V
RDS(ON)=1.0Ω
ID=5.0A
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
●电特性(Tc=25°C)
●Electronic Characteristics(Tc=25°C)
参数
PARAMETER
漏-源击穿电压
Drain-source Breakdown Voltage
击穿电压温度系数
Breakdown Voltage Temperature
Coefficient
栅极开启电压
Gate Threshold Voltage
符号
SYMBOL
BVDSS
ΔBVDSS/
ΔTj
VGS(TH)
漏-源漏电流
Drain-source Leakage Current
IDSS
跨导
Forward Transconductance
gfs
测试条件
TEST CONDITION
VGS=0V, ID=250µA
ID=1mA, Referenced to
25°C
VGS=VDS, ID=250µA
VDS =400V,
VGS =0V, Tj=25°C
VDS =320V,
VGS =0V, Tj=125°C
VDS =50, ID=2.5A
③
●订单信息/ORDERING INFORMATION:
最小值
MIN
400
典型值
TYP
最大值
MAX
单位
UNIT
V
0.54 V/°C
2.0 4.0 V
25 µA
250 µA
2.4 S
包装形式/PACKING
订货编码/ORDERING CODE
普通塑封料/ Normal Package Material 无卤塑封料/Halogen Free
TO-220 条管装/TUBE PACKING
SIF6N40D TO-220-TU
SIF6N40D TO-220-TU-HF
TO-220FP 条管装/TUBE PACKING
SIF6N40D TO-220FP-TU
SIF6N40 D TO-220FP-TU-HF
Si semiconductors 2016.3
1
No Preview Available ! |
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET
参数
PARAMETER
栅极漏电流
Gate-body Leakage
Current (VDS = 0)
漏-源导通电阻
Static Drain-source On
Resistance
输入电容
Input Capacitance
输出电容
Output Capacitance
反馈电容
Feedback Capacitance
关断延迟
Turn -Off Delay Time
栅极电荷
Total Gate Charge
栅源电荷
Gate-to-Source Charge
栅漏电荷
Gate-to-Drain Charge
二极管正向电流
Continuous Diode Forward
Current
二极管正向压降
Diode Forward Voltage
反向恢复时间
Reverse Recovery Time
反向恢复电荷
Reverse Recovery Charge
符号
SYMBOL
IGSS
RDS(ON)
Ciss
Coss
Crss
Td(off)
Qg
Qgs
Qgd
IS
VSD
trr
Qrr
测试条件
TEST CONDITION
VGS =±20V
VGS =10V, ID=3.0A
③
VGS = 0V, VDS = 25V
F = 1.0MHZ
VDD=200V, ID =3.0A
RG= 12Ω, RD= 36Ω
③
ID =5.5A, VDS = 320V
VGS = 10V
③
Tj=25°C, Is=6.0A
VGS =0V ③
Tj=25°C, If=3.0A
di/dt=100A/μs
③
产品规格书
Product Specification
SIF6N40D
最小值
MIN
典型值
TYP
最大值 单位
MAX UNIT
±100
nA
0.98 1.2 Ω
580
45 pF
17
20 ns
16 nC
3.4 nC
8 nC
5.0 A
1.5 V
260 ns
1.2 uC
●热特性
●Thermal Characteristics
参数
PARAMETER
热阻结-壳
Thermal Resistance Junction-case
热阻结-环境
Thermal Resistance Junction-ambient
符号
SYMBOL
RthJC
RthJA
最大值
MAX
TO-220
TO-220FP
1.18 3.12
62.5 62.5
单位
UNIT
℃/W
℃/W
注释(Notes):
① 脉冲宽度:以最高节温为限制
Repetitive rating: Pulse width limited by maximum junction temperature
② 初始结温=25oC, VDD =50V, L=9.1mH, RG =25Ω, IAS=5.0A
Starting Tj=25oC, VDD =50V, L=9.1mH, RG =25Ω, IAS=5.0A
③ 脉冲测试:脉冲宽度≤ 300μs ,占空比≤ 2 %
Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
Si semiconductors 2016.3
2
No Preview Available ! |
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET
● 特性曲线
产品规格书
Product Specification
SIF6N40D
图 1 输出特性曲线, Tc=25℃
Fig1 Typical Output Characteristics, Tc=25℃
图 2 输出特性曲线, Tc=150℃
Fig2 Typical Output Characteristics, Tc=150℃
图 3 导通电阻与温度曲线
Fig3 Normalized On-Resistance Vs.Temperature
图 4 二极管正向电压曲线
Fig4 Typical Source-Drain Diode Forward Voltage
图 5 最大漏极电流与壳温曲线
Fig5 Maximum Drain Current Vs.Case Temperature
Si semiconductors 2016.3
3
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