SIF4N65C PDF даташит
Спецификация SIF4N65C изготовлена «SI Semiconductors» и имеет функцию, называемую «N-CHANNEL POWER MOSFET». |
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Детали детали
Номер произв | SIF4N65C |
Описание | N-CHANNEL POWER MOSFET |
Производители | SI Semiconductors |
логотип |
9 Pages
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深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET
SIF4N65C
●特点:热阻低 开关速度快 输入阻抗高 符合RoHS规范
●FEATURES:■LOW THERMAL RESISTANCE ■FAST SWITCHING ■HIGH INPUT RESISTANCE
■RoHS COMPLIANT
●应用:电子镇流器 电子变压器 开关电源
●APPLICATION: ■ELECTRONIC BALLAST■ELECTRONIC TRANSFORMER■SWITCH MODE POWER SUPPLY
●最大额定值(Tc=25°C)
●Absolute Maximum Ratings(Tc=25°C)
TO-220/220FP/262/263
参数
PARAMETER
符号
SYMBOL
额定值
VALUE
单位
UNIT
漏-源电压
Drain-source Voltage
VDS
650 V
栅-源电压
gate-source Voltage
漏极电流
Continuous Drain Current
TC=25℃
漏极电流
Continuous Drain Current
TC=100℃
最大脉冲电流
Drain Current -Pulsed ①
VGS
ID
ID
IDM
±30
4.0
2.5
16
V
A
A
A
耗散功率
Power Dissipation
TO-220:100
Ptot
TO-220FP:33
W
TO-262/263:100
最高结温
Junction Temperature
Tj
150 °C
存储温度
Storage Temperature
TSTG
-55-150
°C
单脉冲雪崩能量
Single Pulse Avalanche Energy
②
EAS
128 mJ
VDS=650V
RDS(ON)=2.8Ω
ID=4.0A
●电特性(Tc=25°C)
●Electronic Characteristics(Tc=25°C)
参数
PARAMETER
符号
SYMBOL
测试条件
TEST CONDITION
最小值
MIN
典型值
TYP
最大值 单位
MAX UNIT
漏-源击穿电压
Drain-source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
650
V
击穿电压温度系数
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/
ΔTj
ID=250uA, Referenced to
25°C
0.6
V/°C
栅极开启电压
Gate Threshold Voltage
VGS(TH)
VGS=VDS, ID=250µA
2.0
4.0 V
漏-源漏电流
Drain-source Leakage Current
IDSS
VDS =650V,
VGS =0V, Tj=25°C
VDS =520V,
VGS =0V, Tj=125°C
25 µA
250 µA
跨导
Forward Transconductance
gfs
VDS =40V, ID=2.0A
③
2.5 S
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
TO-220 条管装/TUBE PACKING
TO-220FP 条管装/TUBE PACKING
TO-262 或 263 条管装/TUBE PACKING
TO-263 编带装/TAPE & REEL PACKING
订货编码/ORDERING CODE
普通塑封料/ Normal Package Material
无卤塑封料/Halogen Free
SIF4N65C TO-220-TU
SIF4N65C TO-220-TU-HF
SIF4N65C TO-220FP-TU
SIF4N65C TO-262-TU 或
SIF4N65C TO-263-TU
SIF4N65C TO-220FP-TU-HF
SIF4N65C TO-262-TU-HF 或
SIF4N65C TO-263-TU-HF
SIF4N65C TO-263-TR
SIF4N65C TO-263-TR-HF
Si semiconductors 2013.7
1
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深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET
产品规格书
Product Specification
SIF4N65C
参数
PARAMETER
栅极漏电流
Gate-body Leakage
Current (VDS = 0)
漏-源导通电阻
Static Drain-source On
Resistance
输入电容
Input Capacitance
关断延迟
Turn -Off Delay Time
栅极电荷
Total Gate Charge
栅源电荷
Gate-to-Source Charge
栅漏电荷
Gate-to-Drain Charge
二极管正向电流
Continuous Diode Forward
Current
二极管正向压降
Diode Forward Voltage
反向恢复时间
Reverse Recovery Time
反向恢复电荷
Reverse Recovery Charge
符号
SYMBOL
测试条件
TEST CONDITION
最小值 典型值
MIN
TYP
最大值
MAX
单位
UNIT
IGSS VGS =±30V
±100
nA
RDS(ON)
Ciss
Td(off)
Qg
Qgs
Qgd
IS
VSD
trr
Qrr
VGS =10V, ID=2.0A
③
VGS = 0V, VDS = 25V
F = 1.0MHZ
VDD=325V, ID =4.0A
RG=25Ω ③
ID =4.0A, VDS =520V
VGS = 10V
③
Tj=25°C, Is=4.0A
VGS =0V ③
Tj=25°C, If=4.0A
di/dt=100A/μs
③
2.5 2.8 Ω
500 pF
40 ns
15.8 nC
3.5 nC
6.0 nC
4.0 A
1.4 V
390 ns
1.5 uC
●热特性
●Thermal Characteristics
参数
PARAMETER
热阻结-壳
Thermal Resistance Junction-case
热阻结-环境
Thermal Resistance Junction-ambient
符号
SYMBOL
RthJC
RthJA
TO-220
1.25
62.5
最大值
MAX
TO-220FP
3.79
62.5
TO-262/263
1.25
62.5
单位
UNIT
℃/W
℃/W
注释(Notes):
① 脉冲宽度:以最高结温为限制
Repetitive rating: Pulse width limited by maximum junction temperature
② 初始结温=25oC, VDD =50V, L=25mH, RG =25Ω, IAS=4.0A
Starting Tj=25oC, VDD =50V, L=25mH, RG =25Ω, IAS=4.0A
③ 脉冲测试:脉冲宽度≤ 300μs ,占空比≤ 2 %
Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
Si semiconductors 2013.7
2
No Preview Available ! |
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET
● 特性曲线
产品规格书
Product Specification
SIF4N65C
图 1 输出特性曲线, Tc=25℃
Fig1 Typical Output Characteristics, Tc=25℃
图 2 输出特性曲线, Tc=150℃
Fig2 Typical Output Characteristics, Tc=150℃
图 3 导通电阻与温度曲线
Fig3 Normalized On-Resistance Vs.Temperature
图 4 二极管正向电压曲线
Fig4 Typical Source-Drain Diode Forward Voltage
图 5 最大漏极电流与壳温曲线
Fig5 Maximum Drain Current Vs.Case Temperature
Si semiconductors 2013.7
3
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