SIF5N60C PDF даташит
Спецификация SIF5N60C изготовлена «SI Semiconductors» и имеет функцию, называемую «N-CHANNEL POWER MOSFET». |
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Детали детали
Номер произв | SIF5N60C |
Описание | N-CHANNEL POWER MOSFET |
Производители | SI Semiconductors |
логотип |
7 Pages
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深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET
SIF5N60C
●特点:热阻低 开关速度快 输入阻抗高 符合RoHS规范
●FEATURES:■LOW THERMAL RESISTANCE ■FAST SWITCHING ■HIGH INPUT RESISTANCE
■RoHS COMPLIANT
●应用:电子镇流器 电子变压器 开关电源
●APPLICATION: ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER ■SWITCH MODE POWER SUPPLY
●最大额定值(TC=25°C)
●Absolute Maximum Ratings(Tc=25°C) TO-251/251S/252
参数
符号
额定值
单位
PARAMETER
SYMBOL VALUE UNIT
漏-源电压
Drain-source Voltage
VDS 600
V
栅-源电压
gate-source Voltage
VGS ±30
V
漏极电流
Continuous Drain Current
TC=25℃
ID 5.0* A
漏极电流
Continuous Drain Current
TC=100℃
ID 3.15* A
最大脉冲电流
Drain Current -Pulsed ①
IDM 20*
A
耗散功率
Power Dissipation
Ptot 50
W
最高结温
Junction Temperature
存储温度
Storage Temperature
Tj
TSTG
150
-55-150
°C
°C
单脉冲雪崩能量
Single Pulse Avalanche Energy ②
EAS
210
mJ
VDS=600V
RDS(ON)=2.0Ω
ID=5.0A
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
●电特性(Tc=25°C)
●Electronic Characteristics(Tc=25°C)
参数
符号
测试条件
PARAMETER
SYMBOL
TEST CONDITION
漏-源击穿电压
Drain-source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
最小值
MIN
600
典型值
TYP
最大值
MAX
单位
UNIT
V
击穿电压温度系数
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/
ΔTj
ID=250uA, Referenced to
25°C
0.6
V/°C
栅极开启电压
Gate Threshold Voltage
VGS(TH)
VGS=VDS, ID=250µA
2.0
4.0 V
漏-源漏电流
Drain-source Leakage Current
跨导
Forward Transconductance
IDSS
gfs
VDS =600V,
VGS =0V, Tj=25°C
VDS =480V,
VGS =0V, Tj=125°C
VDS =40V, ID=2.5A
③
10 µA
100 µA
4.0 S
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
TO-252 或 251 或 251S 条管装/TUBE PACKING
TO-252 编带装/TAPE & REEL PACKING
订货编码/ORDERING CODE
普通塑封料
Normal Package Material
SIF5N60C TO-251-TU 或
TO-251S-TU 或 TO-252-TU
无卤塑封料
Halogen Free
SIF5N60C TO-251-TU-HF 或
TO-251S-TU-HF 或 TO-252-TU-HF
SIF5N60C TO-252-TR
SIF5N60C TO-252-TR-HF
Si semiconductors 2013.5
1
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深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET
产品规格书
Product Specification
SIF5N60C
参数
PARAMETER
栅极漏电流
Gate-body Leakage
Current (VDS = 0)
漏-源导通电阻
Static Drain-source On
Resistance
输入电容
Input Capacitance
关断延迟
Turn -Off Delay Time
栅极电荷
Total Gate Charge
栅源电荷
Gate-to-Source Charge
栅漏电荷
Gate-to-Drain Charge
二极管正向电流
Continuous Diode Forward
Current
二极管正向压降
Diode Forward Voltage
反向恢复时间
Reverse Recovery Time
反向恢复电荷
Reverse Recovery Charge
符号
SYMBOL
测试条件
TEST CONDITION
IGSS VGS =±30V
RDS(ON)
Ciss
Td(off)
Qg
Qgs
Qgd
IS
VSD
trr
Qrr
VGS =10V, ID=2.5A
③
VGS = 0V, VDS = 25V
F = 1.0MHZ
VDD=300V, ID =5.0A
RG=25Ω ③
ID =5.0A, VDS = 480V
VGS = 10V
③
Tj=25°C, Is=5.0A
VGS =0V ③
Tj=25°C, If=5.0A
di/dt=100A/μs
③
最小值
MIN
典型值
TYP
最大值
MAX
单位
UNI
T
±100 nA
1.6 2.0 Ω
560 pF
38 ns
15 nC
2.5 nC
6.6 nC
5.0 A
1.4 V
270 ns
1.9 uC
●热特性
●Thermal Characteristics
参数
PARAMETER
热阻结-壳
Thermal Resistance Junction-case
热阻结-环境
Thermal Resistance Junction-ambient
符号
SYMBOL
RthJC
RthJA
最大值
MAX
TO-251/251S/252
2.50
110.0
单位
UNIT
℃/W
℃/W
注释(Notes):
① 脉冲宽度:以最高节温为限制
Repetitive rating: Pulse width limited by maximum junction temperature
② 初始结温=25oC, VDD =50V, L=18.9mH, RG =25Ω, IAS=5.0A
Starting Tj=25oC, VDD =50V, L=18.9mH, RG =25Ω, IAS=5.0A
③ 脉冲测试:脉冲宽度≤ 300μs ,占空比≤ 2 %
Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
Si semiconductors 2013.5
2
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深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET
● 特性曲线
产品规格书
Product Specification
SIF5N60C
图 1 输出特性曲线, Tc=25℃
Fig1 Typical Output Characteristics, Tc=25℃
图 2 导通电阻与漏极电流和栅极电压曲线
Fig2 On-Resistance Vs.Drain Current and Gate Voltage
图 3 导通电阻与温度曲线
Fig3 Normalized On-Resistance Vs.Temperature
图 4 二极管正向电压曲线
Fig4 Typical Source-Drain Diode Forward Voltage
图 5 最大漏极电流与壳温曲线
Fig5 Maximum Drain Current Vs.Case Temperature
Si semiconductors 2013.5
图 6 最大安全工作区曲线
Fig6 Maximum Safe Operating Area
3
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