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Número de pieza | SIF2N60D | |
Descripción | N-CHANNEL POWER MOSFET | |
Fabricantes | SI Semiconductors | |
Logotipo | ||
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No Preview Available ! 深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET
SIF2N60D
●特点:导通电阻低 开关速度快 输入阻抗高 符合RoHS规范
■●FEATURES:■LOW ON-RESISTANCE ■FAST SWITCHING ■HIGH INPUT RESISTANCE RoHS COMPLIANT
●应用:电子镇流器 电子变压器 开关电源
●APPLICATION: ■ELECTRONIC BALLAST■ELECTRONIC TRANSFORMER■SWITCH MODE POWER SUPPLY
●最大额定值(Tc=25°C)
●Absolute Maximum Ratings(Tc=25°C) TO-251/251S/252
参数
符号
额定值
单位
PARAMETER
SYMBOL VALUE UNIT
漏-源电压
Drain-source Voltage
VDS 600
V
栅-源电压
gate-source Voltage
VGS ±30
V
漏极电流
Continuous Drain Current
TC=25℃
ID 2.0* A
漏极电流
Continuous Drain Current
TC=100℃
ID 1.25* A
VDS=600V
RDS(ON)=4.5Ω
ID=2.0A
最大脉冲电流
Drain Current -Pulsed ①
IDM 8.0*
A
耗散功率
Power Dissipation
最高结温
Junction Temperature
存储温度
Storage Temperature
单脉冲雪崩能量
Single Pulse Avalanche Energy ②
Ptot
Tj
TSTG
EAS
44
150
-55-150
120
W
°C
°C
mJ
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
●电特性(Tc=25°C)
●Electronic Characteristics(Tc=25°C)
参数
符号
测试条件
PARAMETER
SYMBOL
TEST CONDITION
漏-源击穿电压
Drain-source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
最小值
MIN
600
典型值
TYP
最大值
MAX
单位
UNIT
V
击穿电压温度系数
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/
ΔTj
ID=250uA, Referenced to
25°C
0.6
V/°C
栅极开启电压
Gate Threshold Voltage
VGS(TH)
VGS=VDS, ID=250µA
2.0
4.0 V
漏-源漏电流
Drain-source Leakage Current
IDSS
VDS =600V,
VGS =0V, Tj=25°C
VDS =480V,
VGS =0V, Tj=125°C
25 µA
250 µA
跨导
Forward Transconductance
gfs
VDS =40V, ID=1A
③
1.5 S
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
TO-252 或 251 或 251S 条管装/TUBE PACKING
TO-252 编带装/TAPE & REEL PACKING
订货编码/ORDERING CODE
普通塑封料
无卤塑封料
Normal Package Material
Halogen Free
SIF2N60D TO-251-TU 或
SIF2N60D TO-251-TU-HF 或
TO-251S-TU 或 TO-252-TU TO-251S-TU 或 TO-252-TU-HF
SIF2N60D TO-252-TR
SIF2N60D TO-252-TR-HF
Si semiconductors 2013.7
1
1 page 深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
符号/SYMBOL
A
b
C
D
D1
E
e
L
L1
L2
TO-251S 封装机械尺寸
TO-251S (IPAK) MECHANICAL DATA
单位:毫米/UNIT:mm
最小值/min
典型值/nom
最大值/max
2.20
2.40
0.60
0.85
0.45
0.50
0.60
6.50
6.70
5.10
5.50
5.9 6.20
2.18
2.29
2.38
11.00
12.40
4.8 5.3
3.5 4.2
Si semiconductors 2013.7
5
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet SIF2N60D.PDF ] |
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