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Número de pieza | SIF1N60 | |
Descripción | N-CHANNEL POWER MOSFET | |
Fabricantes | SI Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SIF1N60 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! 深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET
SIF1N60C
●特点:导通电阻低 开关速度快 输入阻抗高 符合RoHS规范
■●FEATURES:■LOW ON-RESISTANCE ■FAST SWITCHING ■HIGH INPUT RESISTANCE RoHS COMPLIANT
●应用:电子镇流器 电子变压器 开关电源
●APPLICATION: ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER ■SWITCH MODE POWER SUPPLY
●最大额定值(TC=25°C)
●Absolute Maximum Ratings(Tc=25°C)
TO-92/251/251S/252
参数
PARAMETER
漏-源电压
Drain-source Voltage
栅-源电压
gate-source Voltage
漏极电流
Continuous Drain Current
TC=25℃
漏极电流
Continuous Drain Current
TC=100℃
最大脉冲电流
Drain Current -Pulsed ①
符号
SYMBOL
VDS
VGS
ID
ID
IDM
额定值
VALUE
600
±30
1.0*
0.6*
4.0*
单位
UNIT
V
V
A
A
A
VDS=600V
RDS(ON)=15Ω
ID=1.0A
耗散功率
Power Dissipation (TL=25°C)
最高结温
Junction Temperature
存储温度
Storage Temperature
PD
Tj
TSTG
TO-92:3
TO-251/251S/252:28
150
-55-150
W
°C
°C
单脉冲雪崩能量
Single Pulse Avalanche Energy②
EAS
14 mJ
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
●电特性(Tc=25°C)
●Electronic Characteristics(Tc=25°C)
参数
PARAMETER
符号
SYMBOL
测试条件
TEST CONDITION
最小值 典型值 最大值 单位
MIN TYP MAX UNIT
漏-源击穿电压
Drain-source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
600
V
击穿电压温度系数
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/
ΔTj
ID=250uA, Referenced to
25°C
0.6 V/°C
栅极开启电压
Gate Threshold Voltage
VGS(TH)
VGS=VDS, ID=250µA
2.0
4.0 V
VDS =600V,
漏-源漏电流
Drain-source Leakage Current
IDSS
VGS =0V, Tj=25°C
VDS =480V,
VGS =0V, Tj=125°C
跨导
Forward Transconductance
gfs
VDS =40V, ID=0.5A ③
0.5
25 µA
250 µA
S
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
TO-92 普通袋装/NORMAL PACKING
订货编码/ORDERING CODE
普通塑封料/ Nomal Package
Material
无卤塑封料/Halogen Free
SIF1N60C TO-92
SIF1N60C TO-92-HF
TO-92 盒式编带/AMMOPACK
SIF1N60C TO-92-AP
SIF1N60C TO-92-AP-HF
TO-251 或 251S 普通袋装/NORMAL PACKING SIF1N60C TO-251 或 TO-251S SIF1N60C TO-251 或 TO-251S-HF
TO-252 或 251 或 251S 条管装/TUBE PACKING
TO-252 编带装/TAPE & REEL PACKING
SIF1N60C TO-251-TU 或
TO-251S-TU 或 TO-252-TU
SIF1N60C TO-252-TR
SIF1N60C TO-251-TU-HF 或
TO-251S-TU-HF 或 TO-252-TU-HF
SIF1N60C TO-252-TR-HF
Si semiconductors 2013.12
1
1 page 深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
符号/SYMBOL
A
b
c
φD
D
d
E
e
e1
L
L1
TO-92 封装机械尺寸
TO-92 MECHANICAL DATA
最小值/min
4.30
0.30
0.30
典型值/nom
单位:毫米/UNIT:mm
最大值/max
5.30
0.55
0.50
4.30
5.20
1.00
3.20
12.70
1.50
2.54
1.27
1.70
4.20
15.00
2.00
Si semiconductors 2013.12
5
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet SIF1N60.PDF ] |
Número de pieza | Descripción | Fabricantes |
SIF1N60 | N-CHANNEL POWER MOSFET | SI Semiconductors |
SIF1N60EA | N-CHANNEL POWER MOSFET | SI Semiconductors |
SIF1N65C | N-CHANNEL POWER MOSFET | SI Semiconductors |
SIF1N65EA | N-CHANNEL POWER MOSFET | SI Semiconductors |
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