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Número de pieza | SIF160N040 | |
Descripción | N-CHANNEL POWER MOSFET | |
Fabricantes | SI Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SIF160N040 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! 深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET
SIF160N040
●特点:热阻低 导通电阻低 栅极电荷低,开关速度快 输入阻抗高 符合RoHS规范
●FEATURES:■LOW THERMAL RESISTANCE ■LOW RDS(ON) TO MINIMIZE CONDUCTIVE LOSS ■LOW GATE
■CHARGE FOR FAST SWITCHING ■HIGH INPUT RESISTANCE RoHS COMPLIANT
●应用:低压高频逆变电路 续流电流 保护电流
●APPLICATION: ■LOW VOLTAGE,HIGH FREQUENCY INVERTERS ■FREE WHEELING
■POLARITY PROTECTION APPLICATIONS
●最大额定值(TC=25°C)
●Absolute Maximum Ratings(Tc=25°C)
参数
PARAMETER
符号 额定值
SYMBOL VALUE
漏-源电压
Drain-source Voltage
栅-源电压
gate-source Voltage
漏极电流
Continuous Drain Current
TC=25℃
耗散功率
Total Power Dissipation
①
①
VDS
VGS
ID
Ptot
40
±20
160*
158*
最高结温
Junction Temperature
存储温度
Storage Temperature
Tj
TSTG
150
-55-175
单脉冲雪崩能量
Single Pulse Avalanche Energy
②
EAS 724
TO-220
单位
UNIT
V
V
A
W
°C
°C
mJ
VDS=40V
RDS(ON)=4mΩ
ID=160A
●电特性(Tc=25°C)
●Electronic Characteristics(Tc=25°C)
参数
PARAMETER
符号
SYMBOL
测试条件
TEST CONDITION
最小值
MIN
典型值
TYP
最大值 单位
MAX UNIT
漏-源击穿电压
Drain-source Breakdown Voltage
击穿电压温度系数
Breakdown Voltage Temperature
Coefficient
栅极开启电压
Gate Threshold Voltage
BVDSS
ΔBVDSS/
ΔTj
VGS(TH)
VGS=0V, ID=250µA
ID=250uA, Referenced to
25°C
VGS=VDS, ID=250µA
40
0.7
2.0
V
V/°C
4.0 V
漏-源漏电流
Drain-source Leakage Current
IDSS
VDS =32V,
VGS =0V, Tj=25°C
VDS =32V,
VGS =0V, Tj=125°C
1 µA
100 µA
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
TO-220 条管装/TUBE PACKING
订货编码/ORDERING CODE
普通塑封料/ Normal Package Material 无卤塑封料/Halogen Free
SIF160N040 TO-220-TU
SIF160N040 TO-220-TU-HF
Si semiconductors 2013.5
1
1 page 深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
深爱公司 MOSFET 产品信息
Sisemi's MOSFET device INFORMATION
1、深爱公司 MOSFET 产品型号码说明/MOSFETs part numbering scheme:
SIF 110 N 060
①②③④
①-深爱公司 MOSFET 产品/ Sisemi's MOSFET device;
②-标称电流值/Indicative current range;
③-N 沟型/ N channel;
④-击穿耐压值/ Breakdown voltage;
2、产品规格标示及订单信息规范/ORDERING INFORMATION:
包装形式/PACKING
条管/TUBE -- TU
订货型号码/ORDERING CODE
SIF160N040 TO-220--TU
产品规格标签标示/
LABEL INDICATION
TO-220--TU
说明:SIF160N040---产品型号/part number;TO-220 封装形式/PACKAGE;
封装形式/PACKAGE
TO-220-TU
TO-220FP-TU
管装包装规格/ TUBE PACKING
只/条
条/箱
pcs/Tube
Tube/Box
50 100
50 100
只/箱
pcs/ Outer Box
5,000
5,000
Si semiconductors 2013.5
5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet SIF160N040.PDF ] |
Número de pieza | Descripción | Fabricantes |
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