|
|
Número de pieza | SIF80N060 | |
Descripción | N-CHANNEL POWER MOSFET | |
Fabricantes | SI Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SIF80N060 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! 深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET
SIF80N060
●特点:热阻低 导通电阻低 栅极电荷低,开关速度快 输入阻抗高 符合RoHS规范
●FEATURES:■LOW THERMAL RESISTANCE ■LOW RDS(ON) TO MINIMIZE CONDUCTIVE LOSS ■LOW GATE
■CHARGE FOR FAST SWITCHING ■HIGH INPUT RESISTANCE RoHS COMPLIANT
●应用:低压高频逆变电路 续流电流 保护电流
●APPLICATION: ■LOW VOLTAGE,HIGH FREQUENCY INVERTERS ■FREE WHEELING
■POLARITY PROTECTION APPLICATIONS
●最大额定值(TC=25°C)
●Absolute Maximum Ratings(Tc=25°C)
参数
符号 额定值
PARAMETER
SYMBOL VALUE
漏-源电压
Drain-source Voltage
VDS 60
栅-源电压
gate-source Voltage
VGS ±20
漏极电流
Continuous Drain Current
ID 80*
TC=25℃
①
耗散功率
Total Power Dissipation ①
Ptot
100*
最高结温
Junction Temperature
Tj 150
存储温度
Storage Temperature
TSTG
-55-175
单脉冲雪崩能量
Single Pulse Avalanche Energy
②
EAS 437
TO-220
单位
UNIT
V
V
A
W
°C
°C
mJ
●电特性(Tc=25°C)
●Electronic Characteristics(Tc=25°C)
参数
PARAMETER
符号
SYMBOL
漏-源击穿电压
Drain-source Breakdown Voltage
BVDSS
栅极开启电压
Gate Threshold Voltage
VGS(TH)
测试条件
TEST CONDITION
VGS=0V, ID=250µA
VGS=VDS, ID=250µA
漏-源漏电流
Drain-source Leakage Current
栅极漏电流
Gate-body Leakage
Current (VDS = 0)
IDSS
IGSS
VDS =48V,
VGS =0V, Tj=25°C
VDS =48V,
VGS =0V, Tj=125°C
VGS =±20V
漏-源导通电阻
Static Drain-source On
Resistance
RDS(ON)
VGS =10V, ID=30A
VGS =4.5V, ID=20A
VDS=60V
RDS(ON)=6mΩ
ID=80A
最小值
MIN
60
典型值
TYP
最大值
MAX
单位
UNIT
V
2.0 3.0 V
100 nA
10 µA
±100
nA
6.0 7.2 mΩ
7.0 8.5 mΩ
跨导
Forwad Transconductance
gfs
VDS =5V, ID=5A
30 S
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
订货编码/ORDERING CODE
普通塑封料/ Normal Package Material 无卤塑封料/Halogen Free
TO-220 条管装/TUBE PACKING
SIF80N060 TO-220-TU
SIF80N060 TO-220-TU-HF
Si semiconductors 2013.5
1
1 page 深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
深爱公司 MOSFET 产品信息
Sisemi's MOSFET device INFORMATION
1、深爱公司 MOSFET 产品型号码说明/MOSFETs part numbering scheme:
SIF 110 N 060
①②③④
①-深爱公司 MOSFET 产品/ Sisemi's MOSFET device;
②-标称电流值/Indicative current range;
③-N 沟型/ N channel;
④-击穿耐压值/ Breakdown voltage;
2、产品规格标示及订单信息规范/ORDERING INFORMATION:
包装形式/PACKING
条管/TUBE -- TU
订货型号码/ORDERING CODE
SIF80N060 TO-220--TU
产品规格标签标示/
LABEL INDICATION
TO-220--TU
说明:SIF80N060---产品型号/part number;TO-220 封装形式/PACKAGE;
封装形式/PACKAGE
TO-220-TU
TO-220FP-TU
管装包装规格/ TUBE PACKING
只/条
条/箱
pcs/Tube
Tube/Box
50 100
50 100
只/箱
pcs/ Outer Box
5,000
5,000
Si semiconductors 2013.5
5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet SIF80N060.PDF ] |
Número de pieza | Descripción | Fabricantes |
SIF80N060 | N-CHANNEL POWER MOSFET | SI Semiconductors |
SIF80N060A | N-CHANNEL POWER MOSFET | SI Semiconductors |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |