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SIF18N65C PDF даташит

Спецификация SIF18N65C изготовлена ​​​​«SI Semiconductors» и имеет функцию, называемую «N-CHANNEL POWER MOSFET».

Детали детали

Номер произв SIF18N65C
Описание N-CHANNEL POWER MOSFET
Производители SI Semiconductors
логотип SI Semiconductors логотип 

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SIF18N65C Даташит, Описание, Даташиты
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
SIF18N65C
●特点:热阻低 开关速度快 输入阻抗高 符合RoHS规范
FEATURES:■LOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE
RoHS COMPLIANT
●应用:电子镇流器 电子变压器 开关电源
APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SUPPLY
●最大额定值(TC=25°C
Absolute Maximum RatingsTc=25°C
TO-220FP
参数
PARAMETER
-源电压
Drain-source Voltage
-源电压
gate-source Voltage
漏极电流
符号 额定值
SYMBOL VALUE
VDS 650
VGS ±30
单位
UNIT
V
V
VDS=650V
RDS(ON)=0.45Ω
ID=18A
Continuous Drain Current
TC=25
ID 18* A
漏极电流
Continuous Drain Current
TC=100
ID 11* A
最大脉冲电流
Drain Current Pulsed
IDM 72*
A
耗散功率
Power Dissipation
最高结温
Junction Temperature
存储温度
Storage Temperature
单脉冲雪崩能量
Single Pulse Avalanche Energy
PD
Tj
TSTG
EAS
65
150
-55-150
1000
W
°C
°C
mJ
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数
PARAMETER
符号
SYMBOL
测试条件
TEST CONDITION
最小值
MIN
典型值
TYP
最大值 单位
MAX UNIT
-源击穿电压
Drain-source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
650
V
击穿电压温度系数
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/
ΔTj
ID=250uA, Referenced to
25°C
0.6
V/°C
栅极开启电压
Gate Threshold Voltage
VGS(TH)
VGS=VDS, ID=250µA
2.0
4.0 V
-源漏电流
Drain-source Leakage Current
IDSS
VDS =650V,
VGS =0V, Tj=25°C
VDS =520V,
VGS =0V, Tj=125°C
1 µA
10 µA
跨导
Forward Transconductance
gfs
VDS =40V, ID=9.0A
8S
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
订货编码/ORDERING CODE
普通塑封料/ Normal Package Material 无卤塑封料/Halogen Free
TO-220FP 条管装/TUBE PACKING
SIF18N65C TO-220FP-TU
SIF18N65C TO-220FP-TU-HF
Si semiconductors 2013.4
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SIF18N65C Даташит, Описание, Даташиты
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
参数
PARAMETER
栅极漏电流
Gate-body Leakage
Current (VDS = 0)
-源导通电阻
Static Drain-source On
Resistance
输入电容
Input Capacitance
关断延迟
Turn -Off Delay Time
栅极电荷
Total Gate Charge
栅源电荷
Gate-to-Source Charge
栅漏电荷
Gate-to-Drain Charge
二极管正向电流
Continuous Diode Forward
Current
二极管正向压降
Diode Forward Voltage
反向恢复时间
Reverse Recovery Time
反向恢复电荷
Reverse Recovery Charge
符号
SYMBOL
IGSS
RDS(ON)
Ciss
Td(off)
Qg
Qgs
Qgd
IS
VSD
trr
Qrr
测试条件
TEST CONDITION
VGS =±30V
VGS =10V, ID=9.0A
VGS = 0V, VDS = 25V
F = 1.0MHZ
VDD=320V, ID =18A
RG=5Ω
ID =9A, VDS = 320V
VGS = 10V
Tj=25°C, Is=If
VGS =0V
Tj=25°C,If=18A
di/dt=100A/μs
产品规格书
Product Specification
SIF18N65C
最小值
MIN
典型值
TYP
最大值 单位
MAX UNIT
±100
nA
0.37 0.45 Ω
2500
62
50
15
18
pF
ns
nC
nC
nC
18 A
1.5 V
200 ns
0.8 uC
●热特性
Thermal Characteristics
参数
PARAMETER
热阻结-
Thermal Resistance Junction-case
热阻结-环境
Thermal Resistance Junction-ambient
符号
SYMBOL
RthJC
RthJA
最大值
MAX
TO-220FP
1.92
62.5
单位
UNIT
/W
/W
注释(Notes):
脉冲宽度:以最高节温为限制
Repetitive rating: Pulse width limited by maximum junction temperature
Starting Tj=25oC, VDD =50V, L=5mH, RG =25Ω, IAS=18A
脉冲测试:脉冲宽度≤ 300μs ,占空比≤ 2
Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
Si semiconductors 2013.4
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No Preview Available !

SIF18N65C Даташит, Описание, Даташиты
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
● 特性曲线
产品规格书
Product Specification
SIF18N65C
1 输出特性曲线, Tc=25
Fig1 Typical Output Characteristics, Tc=25
2 导通电阻与漏极电流和栅极电压曲线
Fig2 On-Resistance Vs.Drain Current and Gate Voltage
3 导通电阻与温度曲线
Fig3 Normalized On-Resistance Vs.Temperature
4 二极管正向电压曲线
Fig4 Typical Source-Drain Diode Forward Voltage
5 最大漏极电流与壳温曲线
Fig5 Maximum Drain Current Vs.Case Temperature
6 最大安全工作区曲线
Fig6 Maximum Safe Operating Area
Si semiconductors 2013.4
3










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