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Número de pieza | EMZB20P03L | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMZB20P03L (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
RDSON (MAX.)
24mΩ
ID ‐8A
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
ESD Protection
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=‐10A, RG=25Ω
L = 0.05mH
Power Dissipation3
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
EMZB20P03L
LIMITS
±25
‐8
‐6
‐32
‐10
5
2.5
2.5
1
‐55 to 150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
Junction‐to‐Lead
Steady‐State
RJL
30
Junction‐to‐Ambient4
t ≦ 10s
Steady‐State
RJA
50
90
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
3The power dissipation PD is based on TJ(MAX)=150°C, using ≦10s junction‐to‐ambient thermal resistance.
2015/9/2
UNIT
°C / W
p.1
1 page 10
I D = ‐ 8A
8
6
4
Gate Charge Characteristics
VD S = ‐ 5V
‐ 15V
‐ 10V
2
0
0 5 10 15 20
Q g ‐ Gate Charge( nC )
25
EMZB20P03L
2000
1600
1200
800
400
0
0
Capacitance Characteristics
Ciss
f = 1 MHz
VG S = 0 V
Coss
Crss
5 10 15 20
‐ VD S , Drain‐Source Voltage( V )
25
30
Maximum Safe Operating Area
100
10 R D S (O N ) Limit
1
10μs
100μs
1ms
10ms
100ms
1s
DC
0.1
VG S = ‐10V
Single Pulse
R J A = 50°C/W
T A = 25°C
0.01
0.1
1 10
‐VD S ‐ Drain‐Source Voltage( V )
100
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 50°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01 0.1
1
10 100 1000
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.01
0.02
0.01
Single Pulse
0.001
10 ‐5
10‐4
Transient Thermal Response Curve
10‐3
10 ‐2
10‐1
t 1 ,Time (sec)
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ J A = 50°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) * RθJA
1 10
100
2015/9/2
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMZB20P03L.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMZB20P03L | Field Effect Transistor | Excelliance MOS |
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