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Número de pieza | EMB07P03V | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB07P03V (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
D
RDSON (MAX.)
7.8mΩ
ID
‐26A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
TC = 25 °C
TA = 25 °C
VGS
ID
Pulsed Drain Current1
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, ID=‐26A, RG=25Ω
Repetitive Avalanche Energy2
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
IDM
IAS
EAS
EAR
PD
Tj, Tstg
EMB07P03V
LIMITS
±25
‐26
‐15
‐19
‐100
‐26
33.8
16.9
2.5
1
‐55 to 150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2015/10/30
TYPICAL
MAXIMUM
6
50
UNIT
°C / W
p.1
1 page 10
I D = ‐ 15A
8
6
Gate Charge Characteristics
VD S = ‐ 5V
‐ 15V
‐ 10V
4
2
0
0 15 30 45 60
Q g ‐ Gate Charge( nC )
75
EMB07P03V
7500
6000
4500
3000
1500
0
0
Capacitance Characteristics
f = 1 MHz
VG S = 0 V
Ciss
Coss
Crss
5 10 15 20
‐ V D S , Drain‐Source Voltage( V )
25
30
100
R D S (O N ) Limit
10
1
Maximum Safe Operating Area
100μs
1ms
10ms
100ms
1s
10s
DC
0.1
VG S = ‐10V
Single Pulse
R J A = 50°C/W
TA = 25°C
0.01
0.1
1 10
‐VD S ‐ Drain‐Source Voltage( V )
100
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 50°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01 0.1
1
10 100 1000
1
Duty Cycle = 0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
Transient Thermal Response Curve
10 ‐2
10 ‐1
t 1 ,Time (sec)
1
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ J A = 50°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) * RθJA
10 100
1000
2015/10/30
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMB07P03V.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB07P03A | Field Effect Transistor | Excelliance MOS |
EMB07P03CS | Field Effect Transistor | Excelliance MOS |
EMB07P03G | Field Effect Transistor | Excelliance MOS |
EMB07P03V | Field Effect Transistor | Excelliance MOS |
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