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PDF EMF02P02H Data sheet ( Hoja de datos )
| Número de pieza | EMF02P02H | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐20V
D
RDSON (MAX.)
3.2mΩ
ID
‐100A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMF02P02H
LIMITS
UNIT
Gate‐Source Voltage
VGS ±12
Continuous Drain Current1
Pulsed Drain Current2
TC = 25 °C
TC = 100 °C
ID
IDM
‐100
‐73
‐400
Avalanche Current
IAS ‐100
Avalanche Energy
Repetitive Avalanche Energy3
L = 0.1mH, ID=‐100A, RG=25Ω
L = 0.05mH
EAS
EAR
500
250
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
69
27
‐55 to 150
100% UIS testing in condition of VD=‐15V, L=0.1mH, VG=‐5V, IL=‐70A, Rated VDS=‐20V P‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
V
A
mJ
W
°C
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient4
RJA
1Package Limited.
2Pulse width limited by maximum junction temperature.
3Duty cycle 1％
450°C / W when mounted on a 1 in2 pad of 2 oz copper.
1.8
°C / W
50
2016/3/15
p.1
1 page  
10
I D = ‐ 20A
8
6
Gate Charge Characteristics
VD S = ‐10V
4
2
15000
12500
10000
7500
5000
2500
0
0 50 100 150 200 250
Q g ‐ Gate Charge( nC )
0
0
EMF02P02H
Capacitance Characteristics
f =1MHz
VGS=0 V
Ciss
Coss
Crss
5 10 15
‐ VD S , Drain‐Source Voltage( V )
20
M a x i m u m S a f e O p e r a t i n g A r e a
103
R D S ( O N ) L i m i t e d
102
101
1 0 μ s
1 0 0 μ s
1 m s
1 0 m s
D C
100
T C = 2 5 °C
R θJ C = 1.8 °C / W
V g s = ‐4.5 V
S i n g l e P u l s e
10‐1 1 0‐1
1 00 1 01
‐ V D S , D r a i n ‐ S o u r c e V o l t a g e ( V )
1 02
3000
2500
2000
1500
1000
500
0
0.01
Single Pulse Maximum Power Dissipation
Single Pulse
RTθC J= C = 2 15°. 8C° C/W
0.1 1 10 100
Single Pulse Time( mSEC )
1000
1
D uty Cycle = 0.5
0.5
0 .3
0 .2 0.2
0.1 0.1
0 .0 5
0 .0 5
0 .0 2
0 .0 3
0 .0 1
0 .0 2
S in g le P u ls e
0 .0 1
1 0‐2
1 0‐1
Transient Therm al Response Curve
N o te s:
DM
1 10
t 1 ,T im e ( m S E C )
1.D uty Cycle,D =
t1
t2
2 .R θ J C = 1 .8 ° C / W
3 .TJ ‐ T C = P * R θ J C (t )
4 .R θ J C (t ) = r (t ) * RθJC
100
1000
2016/3/15
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMF02P02H.PDF ] | |
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