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Número de pieza | EMD50N15G | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMD50N15G (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
150V
D
RDSON (MAX.)
50mΩ
ID 7A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain‐Source Voltage
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.2mH, ID=7A, RG=25Ω
L = 0.1mH
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
VDSS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2012/5/22
EMD50N15G
LIMITS
150
±30
7
4.5
28
7
4.9
2.45
2.5
1
‐55 to 150
UNIT
V
V
A
mJ
W
°C
MAXIMUM
25
50
UNIT
°C / W
p.1
1 page 10
ID = 7A
8
Gate Charge Characteristics
6
4
VD S = 50V
80V
2
0
0
20 40 60
Q g ‐ Gate Charge( nC )
80
100
M axim um Safe O perating Area
10 RDS(ON) Limited
1
10uS
100uS
1mS
DC100m1S0mS
0.1 TA=25°C
RθJA=125°C/W
Vgs=10V
Single Pulse
0.01
0.1 1
10 100 1000
VDS, Drain‐Source Voltage( V )
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
Transient Thermal Response Curve
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
t 1 ,Time (sec)
1
2012/5/22
EMD50N15G
6000
4500
Ciss
Capacitance Characteristics
f = 1MHz
VG S = 0 V
3000
1500
Coss
Crss
0
0 10 20 30
VD S ‐ Drain‐Source Voltage( V )
40
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 125°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ J A =125°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMD50N15G.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMD50N15A | Field Effect Transistor | Excelliance MOS |
EMD50N15E | Field Effect Transistor | Excelliance MOS |
EMD50N15F | Field Effect Transistor | Excelliance MOS |
EMD50N15G | Field Effect Transistor | Excelliance MOS |
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