|
|
PDF EMB45N06G Data sheet ( Hoja de datos )
| Número de pieza | EMB45N06G | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de EMB45N06G (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
45mΩ
ID 6.5A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=10A, RG=25Ω
L = 0.05mH
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
EMB45N06G
LIMITS
±20
6.5
5
26
10
5
2.5
2.5
1
‐55 to 150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2012/10/25
TYPICAL
MAXIMUM
25
50
UNIT
°C / W
p.1
1 page  
Gate Charge Characteristics
10
I D = 6A
8
V D S = 15V 30V
6
4
2
0
0 3 6 9 12 15 18 21
Q g ‐ Gate Charge( nC )
EMB45N06G
1500
1350
1200
1050
900
750
600
450
300
150
0
0
Capacitance Characteristics
f = 1MHz
V G S = 0 V
Ciss
Coss
Crss
10 20 30 40 50
VD S ‐ Drain‐Source Voltage( V )
60
100
Maximum Safe Operating Area
10 R D S ( O N ) Limit
1
0.1
VG S = 10V
Single Pulse
R JA = 125°C/W
TA = 25°C
100μs
1mS
10mS
100mS
1S
DC
0.01
0.01
1 10
VD S ‐ Drain‐Source Voltage( V )
100
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 125°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
1
Duty Cycle = 0.5
Transient Thermal Response Curve
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
1
t 1 ,Time (sec)
Notes:
P DM
t1
t2
1.Duty Cycle,D =
t1
t2
2.Rθ J A =125° C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
2012/10/25
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMB45N06G.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| EMB45N06A | Field Effect Transistor | Excelliance MOS |
| EMB45N06G | Field Effect Transistor | Excelliance MOS |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |