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PDF EMB03N03V Data sheet ( Hoja de datos )
| Número de pieza | EMB03N03V | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
3.0mΩ
ID 37A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, ID=37A, RG=25Ω
Repetitive Avalanche Energy2
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2015/3/9
EMB03N03V
LIMITS
±20
37
25
148
37
68.4
34.2
21
8.3
2.5
1
‐55 to 150
UNIT
V
A
mJ
W
W
°C
MAXIMUM
6
50
UNIT
°C / W
p.1
1 page  
G a te C h a rg e C h a ra c te ris tic s
12
ID= 1 8 A
10
8
6
VDS =5V
15V
10V
4
10 4
10 3
10 2
C a p a c ita n c e C h a ra c te ristic s
C iss
EMB03N03V
C o ss
C rss
2
0
0 20 40 60
Q g ,G a te C h a rg e ( n C )
f = 1 M H z
V GS= 0 V
0 5 10 15 20 25
V DS ‐D ra in ‐S o u rc e V o lta g e ( V )
30
1000
M axim u m Safe O p erating A rea
100
R D S (O N )Lim it
10
1
1
00 μ s
0
μ s
1ms
1
1s
DC
10m
00ms
s
1 VG S = 1 0 V
Single Pu lse
R θ J C = 6 C /° W
T c = 2 5 °C
0.1
0 .1
1
10
V D S ,D r a in ‐S o u r c e V o lt a g e ( V )
100
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 50°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01 0.1
1
10 100 1000
1
Duty Cycle = 0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.001
10 ‐4
10‐3
Transient Thermal Response Curve
10‐2 10‐1
1
t 1 ,Time (sec)
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ J A = 50°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) * RθJA
10 100
1000
2015/3/9
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMB03N03V.PDF ] | |
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