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Número de pieza | EMB07N04H | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB07N04H (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
40V
D
RDSON (MAX.)
7mΩ
ID 55A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=50A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2015/5/6
EMB07N04H
LIMITS
±20
55
40
150
50
125
62.5
50
20
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
2.5
50
UNIT
°C / W
p.1
1 page Gate Charge Characteristics
10
I D = 24A
8
6
VD S = 15V
20V
4
2
0
0
15 30 45
Q g ‐ Gate Charge( nC )
60
2400
1800
1200
600
0
0
EMB07N04H
Capacitance Characteristics
Ciss
f = 1MHz
VG S = 0 V
Coss
Crss
10 20 30
VD S ‐ Drain‐Source Voltage( V )
40
MAXIMUM SAFE OPERATING AREA
300
200
100
R d s (o n ) Limit
10μ s
50 100μ s
20
10
1ms
10ms
5
D1C00ms
2
1
VG S = 10V
RSIθ N J C G= L2E. 5P° UC/LWSE
Tc = 25° C
0.5
0.5 1
10
VD S ,DRAIN‐ SOURCE VOLTAGE( V )
100
SINGLE PULSE MAXIMUM POWER DISSIPATION
3000
RSθI N JC G= L2E. 5P° UC/LWSE
TC = 25° C
2500
2000
1500
1000
500
0 0.01
0.1 1
10 100
SINGLE PULSE TIME ( mSEC )
1000
1
Duty Cycle = 0.5
0.5
0.3
0.2 0.2
Transient Therm al Response Curve
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
Single Pulse
0.01
10‐2
1 0‐1
Notes:
DM
1 10
t 1 ,Tim e ( m SEC )
1 .D u ty C y cle ,D =
t1
t2
2 .Rθ J C =2 .5 °C /W
3 .TJ ‐ TC = P * Rθ J C (t)
4 .R θ J C (t)= r(t) * RθJC
100
1000
2015/5/6
p.5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet EMB07N04H.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB07N04A | Field Effect Transistor | Excelliance MOS |
EMB07N04H | Field Effect Transistor | Excelliance MOS |
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