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S29C51001B PDF даташит

Спецификация S29C51001B изготовлена ​​​​«SyncMOS» и имеет функцию, называемую «1 MEGABIT / 5 VOLT CMOS FLASH MEMORY».

Детали детали

Номер произв S29C51001B
Описание 1 MEGABIT / 5 VOLT CMOS FLASH MEMORY
Производители SyncMOS
логотип SyncMOS логотип 

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S29C51001B Даташит, Описание, Даташиты
SyncMOS Technologies Inc.
S29C51001T/S29C51001B
1 MEGABIT (131,072 x 8 BIT)
5 VOLT CMOS FLASH MEMORY
Features
s 128Kx8-bit Organization
s Address Access Time: 70, 90, 120 ns
s Single 5V ± 10% Power Supply
s Sector Erase Mode Operation
s 8KB Boot Block (lockable)
s 512 bytes per Sector, 256 Sectors
– Sector-Erase Cycle Time: 10ms (Max)
– Byte-Program Cycle Time: 20µs (Max)
s Minimum 10,000 Erase-Program Cycles
s Low power dissipation
– Active Read Current: 20mA (Typ)
– Active Program Current: 30mA (Typ)
– Standby Current: 100µA (Max)
s Hardware Data Protection
s Low VCC Program Inhibit Below 3.2V
s Self-timed program/erase operations with end-
of-cycle detection
– DATA Polling
– Toggle Bit
s CMOS and TTL Interface
s Available in two versions
S29C51001T (Top Boot Block)
S29C51001B (Bottom Boot Block)
s Packages:
– 32-pin Plastic DIP
– 32-pin TSOP-I
– 32-pin PLCC
Description
The S29C51001T/S29C51001B is a high speed
131,072 x 8 bit CMOS flash memory. Programming
or erasing the device is done with a single 5 Volt
power supply. The device has separate chip enable
CE, program enable WE, and output enable OE
controls to eliminate bus contention.
The S29C51001T/S29C51001B offers a combi-
nation of features: Boot Block with Sector Erase
Mode. The end of program/erase cycle is detected
by DATA Polling of I/O7 or by the Toggle Bit I/O6.
The S29C51001T/S29C51001B features a
sector erase operation which allows each sector to
be erased and reprogrammed without affecting
data stored in other sectors. The device also
supports full chip erase.
Boot block architecture enables the device to
boot from a protected sector loaded either at the
top (S29C51001T) or the bottom (S29C51001B)
sector. All inputs and outputs are CMOS and TTL
compatible.
The S29C51001T/S29C51001B is ideal for
applications that require updatable code and data
storage.
S29C51001T/S29C51001B V1.0 February 2003
1









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S29C51001B Даташит, Описание, Даташиты
SyncMOS Technologies Inc.
S29C51001T/S29C51001B
1 MEGABIT (131,072 x 8 BIT)
5 VOLT CMOS FLASH MEMORY
S 29 C 51 001 T –
OPERATING VOLTAGE
51: 5V
DEVICE
BOOT BLOCK LOCATION
T: TOP
SPEED
PKG.
70: 70ns
90: 90ns
12: 120ns
P = PDIP
T = TSOP-I
J = PLCC
Pin Configurations
N/C
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1 32
2 31
3 30
4 29
5 28
6 27
7 32-Pin PDIP 26
8 Top View 25
9 24
10 23
11 22
12 21
13 20
14 19
15 18
16 17
51001-02
VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
Pin Names
A0–A16
I/O0–I/O7
CE
OE
WE
VCC
GND
NC
Address Inputs
Data Input/Output
Chip Enable
Output Enable
Program Enable
5V ± 10% Power Supply
Ground
No Connect
4 3 2 1 32 31 30
A7 5
29 A14
A6 6
28 A13
A5 7
27 A8
A4 8
A3 9
A2 10
32 Pin PLCC
Top View
26 A9
25 A11
24 OE
A1 11
23 A10
A0 12
I/O0 13
22 CE
21 I/O7
14 15 16 17 18 19 20
51001-03
A11
A9
A8
A13
A14
NC
WE
VCC
N/C
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-Pin TSOP I
Standard Pinout
Top View
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
51001-04
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
S29C51001T/S29C51001B V1.0 February 2003
2









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S29C51001B Даташит, Описание, Даташиты
SyncMOS Technologies Inc.
Functional Block Diagram
X-Decoder
S29C51001T/S29C51001B
1 MEGABIT (131,072 x 8 BIT)
5 VOLT CMOS FLASH MEMORY
1,048,576 Bit
Memory Cell Array
A0–A16
Address buffer & latches
Y-Decoder
CE
OE Control Logic
WE
I/O Buffer & Data Latches
I/O0–I/O7
51001-05
Capacitance (1,2)
Symbol Parameter
CIN Input Capacitance
COUT
Output Capacitance
CIN2
Control Pin Capacitance
NOTE:
1. Capacitance is sampled and not 100% tested.
2. TA = 25°C, VCC = 5V ± 10%, f = 1 MHz.
Latch Up Characteristics(1)
Test mSetup
VIN = 0
VOUT = 0
VIN = 0
Parameter
Input Voltage with Respect to GND on A9, OE
Input Voltage with Respect to GND on I/O, address or control pins
VCC Current
NOTE:
1. Includes all pins except VCC. Test conditions: VCC = 5V, one pin at a time.
Min.
-1
-1
-100
Typ.
6
8
8
Max.
8
12
10
Max.
+13
VCC + 1
+100
Units
pF
pF
pF
Unit
V
V
mA
AC Test Load
Device Under
Test
CL = 100 pF
S29C51001T/S29C51001B V1.0 February 2003
+5.0 V
IN3064
or Equivalent
2.7 k
6.2 k
3
IN3064 or Equivalent
IN3064 or Equivalent
IN3064 or Equivalent
51001-06










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