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PDF EMB12N04G Data sheet ( Hoja de datos )
| Número de pieza | EMB12N04G | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de EMB12N04G (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
40V
D
RDSON (MAX.)
12mΩ
ID 12A G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2015/5/8
EMB12N04G
LIMITS
±20
12
10
48
2.5
1.6
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
25
50
UNIT
°C / W
p.1
1 page  
EMB12N04G
10
I D = 9A
8
6
Gate Charge Characteristics
VD S = 15V 20V
4
2
0
0 8 16 24
Q g ‐ Gate Charge( nC )
32
Maximum Safe Operating Area
100
R D S (O N ) Limit
10
100μs
1ms
10ms
100ms
1 1s
10s
DC
0.1
VG S = 10V
Single Pulse
R J A = 50°C/W
TA = 25°C
0.01
0.1
1 10
VD S ‐ Drain‐Source Voltage( V )
100
1600
1200
800
Capacitance Characteristics
f = 1MHz
VG S = 0 V
Ciss
400
0
0
Coss
Crss
10 20 30
VD S ‐ Drain‐Source Voltage( V )
40
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 50°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
1
Duty Cycle = 0.5
Transient Thermal Response Curve
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
1
t 1 ,Time (sec)
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ J A = 50°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) * RθJA
10 100
1000
2015/5/8
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMB12N04G.PDF ] | |
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