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PDF EMB26N10G Data sheet ( Hoja de datos )
| Número de pieza | EMB26N10G | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
30mΩ
ID 9A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=9A, RG=25Ω
L = 0.05mH
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2015/1/29
EMB26N10G
LIMITS
±20
9
6.4
36
9
4
2
2.5
1
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
25
50
UNIT
°C / W
p.1
1 page  
EMB26N10G
10
Gate Charge Characteristics
I D = 9A
8
4000
Ciss
3000
Capacitance Characteristics
f = 1MHz
VG S = 0 V
6
4
2
0
0
VD S = 25V 50V
10 20 30
Q g ‐ Gate Charge( nC )
40
2000
Coss
1000
Crss
0
0
25 50 75
VD S ‐ Drain‐Source Voltage( V )
100
100
M axim u m Safe O p era tin g A rea
10 R D S ( O N )Limit
100μs
1ms
10ms
1
100ms
1s
DC
0.1
VG S = 10V
Single Pulse
R JA = 50°C/W
0.01 TA = 25°C
0.1 1 10 100
VD S ‐ D r a in ‐ S o u r c e V o lta g e ( V )
1000
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 50°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
1
Duty Cycle = 0.5
Transient Thermal Response Curve
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
1
t 1 ,Time (sec)
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ J A =50°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) * RθJA
10 100
1000
2015/1/29
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMB26N10G.PDF ] | |
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