EMD09N08E PDF даташит
Спецификация EMD09N08E изготовлена «Excelliance MOS» и имеет функцию, называемую «Field Effect Transistor». |
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Детали детали
Номер произв | EMD09N08E |
Описание | Field Effect Transistor |
Производители | Excelliance MOS |
логотип |
6 Pages
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
80V
D
RDSON (MAX.)
9mΩ
ID
103A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.3mH, ID=45A, RG=25Ω
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2014/12/11
EMD09N08E
LIMITS
±25
103
80
200
45
303
101
223
89
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
0.56
60
UNIT
°C / W
p.1
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ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
EMD09N08E
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage
Gate Threshold Voltage
Gate‐Body Leakage
Zero Gate Voltage Drain Current
On‐State Drain Current1
Drain‐Source On‐State Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±25V
VDS = 60V, VGS = 0V
VDS = 50V, VGS = 0V, TJ = 125 °C
VDS = 10V, VGS = 10V
VGS = 10V, ID = 30A
VDS = 5V, ID = 30A
DYNAMIC
80
2.0 3.0
103
7.5
40
4.0
±100
1
25
9
V
nA
A
A
mΩ
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge1,2
Gate‐Source Charge1,2
Gate‐Drain Charge1,2
Turn‐On Delay Time1,2
Rise Time1,2
Turn‐Off Delay Time1,2
Fall Time1,2
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 15mV, VDS = 0V, f = 1MHz
VDS = 40V, VGS = 10V,
ID = 30A
VDS = 40V,
ID = 1A, VGS = 10V, RGS = 6Ω
3905
378
363
2.5
64
19
22
30
200
100
150
pF
Ω
nC
nS
SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Pulsed Current3
Forward Voltage1
IS
ISM
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
IF = IS, VGS = 0V
IF = 30A, dlF/dt = 100A / S
103
A
200
1.3 V
130 nS
400 nC
2014/12/11
p.2
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Ordering & Marking Information:
Device Name: EMD09N08E for TO‐220
D09
D09N08: Device Name
N08
ABCDEFG
ABCDEFG: Date Code
2014/12/11
EMD09N08E
p.3
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Номер в каталоге | Описание | Производители |
EMD09N08A | Field Effect Transistor | Excelliance MOS |
EMD09N08E | Field Effect Transistor | Excelliance MOS |
EMD09N08H | Field Effect Transistor | Excelliance MOS |
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