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PDF EMD60N15E Data sheet ( Hoja de datos )
| Número de pieza | EMD60N15E | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
150V
D
RDSON (MAX.)
60mΩ
ID 43A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain‐Source Voltage
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.2mH, ID=18A, RG=25Ω
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VDSS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2014/10/8
EMD60N15E
LIMITS
150
±30
43
26
120
18
32.4
16.2
83
33
‐55 to 150
UNIT
V
V
A
mJ
W
°C
MAXIMUM
1.5
62.5
UNIT
°C / W
p.1
1 page  
EMD60N15E
Gate Charge Characteristics
10
I D = 20A
8
VD S = 50V
80V
4000
3000
Capacitance Characteristics
f = 1MHz
Ciss VG S = 0 V
6
4
2
2000
1000
Coss
0
0
103
15 30 45
Q g ‐ Gate Charge( nC )
Maximum Safe Operating Area
60
0
0
3000
2500
Crss
10 20 30
VD S ‐ Drain‐Source Voltage( V )
40
Single Pulse Maximum Power Dissipation
Single Pulse
Rθ JC = 1.5° C/W
TC = 25° C
102
RDS(ON) Limited
10μs
100μs
1ms
101
10ms
DC
100
TC=25°C
RθJC=1.5°C/W
Vgs=10V
Single Pulse
10‐1
100
101 102
VDS, Drain‐Source Voltage( V )
2000
1500
1000
500
0
0.01
0.1 1
10 100
Single Pulse Time( sec )
1000
Transient Thermal Response Curve
100
D=0.5
0.2
0.1
10‐1
0.05
0.02
0.01
single pulse
10‐2
※Note :
1. RθJC(t)=1.5°C/W Max.
2. Duty Cycle, D=t1/ t2
3. TJM ‐ TC=PDM*RθJC(t)
PDM
t1
t2
10‐5 10‐4 10‐3 10‐2 10‐1 100 101
t1,Time( sec )
2014/10/8
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMD60N15E.PDF ] | |
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