EMF14N02A PDF даташит
Спецификация EMF14N02A изготовлена «Excelliance MOS» и имеет функцию, называемую «Field Effect Transistor». |
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Детали детали
Номер произв | EMF14N02A |
Описание | Field Effect Transistor |
Производители | Excelliance MOS |
логотип |
6 Pages
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
20V
D
RDSON (MAX.)
13.5mΩ
ID 48A G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
375°C / W when mounted on a 1 in2 pad of 2 oz copper.
2014/11/25
EMF14N02A
LIMITS
±12
48
20
140
33
54
50
20
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
2.5
75
UNIT
°C / W
p.1
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ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
EMF14N02A
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage
Gate Threshold Voltage
Gate‐Body Leakage
Zero Gate Voltage Drain Current
On‐State Drain Current1
Drain‐Source On‐State Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±12V
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125 °C
VDS = 5V, VGS = 4.5V
VGS = 4.5V, ID = 18A
VGS = 2.5V, ID = 9A
VDS = 5V, ID = 18A
DYNAMIC
20
0.45 0.75
48
10
12
7
1.2
±100
1
10
13.5
20
V
nA
A
A
mΩ
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge1,2
Gate‐Source Charge1,2
Gate‐Drain Charge1,2
Turn‐On Delay Time1,2
Rise Time1,2
Turn‐Off Delay Time1,2
Fall Time1,2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 10V, f = 1MHz
VDS = 10V, VGS = 4.5V,
ID = 18A
VDS = 10V,
ID = 1A, VGS = 4.5V, RGS = 6Ω
SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
IF = IS, VGS = 0V
1095
185
164
14.7
1.9
4.7
15
18
35
20
22
1.3
35
42
pF
nC
nS
A
V
nS
nC
2014/11/25
p.2
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Ordering & Marking Information:
Device Name: EMF14N02A for DPAK (TO‐252)
F14
F14N02: Device Name
N02
ABCDEFG
ABCDEFG: Date Code
EMF14N02A
2014/11/25
p.3
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Номер в каталоге | Описание | Производители |
EMF14N02A | Field Effect Transistor | Excelliance MOS |
EMF14N02VAT | Field Effect Transistor | Excelliance MOS |
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