|
|
Número de pieza | EMD04N06A | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMD04N06A (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
4.8mΩ
ID 80A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMD04N06A
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1,3
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=80A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±20
80
50
170
80
320
160
69
27
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=30V, L=0.1mH, VG=10V, IL=50A, Rated VDS=60V N-CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
3Pulsed drain current rating is package limited.
1.8
°C / W
75
2014/8/14
p.1
1 page Gate Charge Characteristics
10
I D = 20A
8
VD S = 15V 30V
6
4
2
0
0
20 40 60
Q g ‐ Gate Charge( nC )
80
1000
M a xim u m S a fe O p e ra tin g A re a
1 0 0
R
d
s
( o n )
L
i
m
i
t
10
1 0 μ s
1 0 0 μs
1ms
D
1
C
0
10m
0ms
s
1 V G S = 1 0 V
S IN G LE P U LSE
R θ J C = 1 . 8 °C / W
T c = 2 5 °C
0.1
0 .1
1
10
V D S , D r a i n ‐ S o u r c e V o l t a g e ( V )
100
1
Transient Thermal Response Curve
Duty Cycle = 0.5
0.5
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
Single Pulse
0.01
10‐2
10‐1
Notes:
DM
1.Duty Cycle,D =
t1
t2
2.Rθ J C =1.8°C/W
3.TJ ‐ TC = P * R θ J C (t)
4.Rθ J C (t)=r(t) * RθJC
1 10 100
t 1 ,Time (sec)
2014/8/14
EMD04N06A
8000
6000
4000
Capacitance Characteristics
f = 1MHz
VG S = 0 V
Ciss
2000
0
0
Coss
Crss
15 30 45
VD S ‐ Drain‐Source Voltage( V )
60
600
500
400
300
200
100
0
0.01
Single Pulse Maximum Power Dissipation
Single Pulse
RTθC J= C = 2 15°. 8C° C/W
0.1 1 10 100
Single Pulse Time (SEC)
1000
1000
p.5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet EMD04N06A.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMD04N06A | Field Effect Transistor | Excelliance MOS |
EMD04N06E | Field Effect Transistor | Excelliance MOS |
EMD04N06F | Field Effect Transistor | Excelliance MOS |
EMD04N06FN | Field Effect Transistor | Excelliance MOS |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |