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PDF EMD09N08A Data sheet ( Hoja de datos )
| Número de pieza | EMD09N08A | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
80V
D
RDSON (MAX.)
9mΩ
ID 56A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.3mH, ID=45A, RG=25Ω
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2015/4/9
EMD09N08A
LIMITS
±25
56
38
170
45
303
101
50
20
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
2.5
75
UNIT
°C / W
p.1
1 page  
Gate Charge Characteristics
10
I D = 30A
8
VD S = 20V 40V
6
4
2
0
0
20 40 60
Q g ‐ Gate Charge( nC )
80
EMD09N08A
6000
Capacitance Characteristics
f = 1MHz
VG S = 0 V
4500
Ciss
3000
1500
0
0
Coss
Crss
20 40 60
VD S ‐ Drain‐Source Voltage( V )
80
103
Maximum Safe Operating Area
RDS(ON) Limited
102
10μs
101
100μs
1ms
10ms
DC
100
TC=25°C
RθJC=2.5°C/W
Vgs=10V
Single Pulse
10‐1
100 101
102
VDS, Drain‐Source Voltage( V )
3000
2500
2000
1500
1000
500
0 0.01
Single Pulse Maximum Power Dissipation
Single Pulse
Rθ J C = 2.5° C/W
TC = 25° C
0.1 1 10 100 1000
Single Pulse Time(SEC)
T ra n sie n t T h e rm a l R e spo n se C urve
1
Duty Cycle = 0.5
0.5
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
Single Pulse
0.01
1 0‐2
1 0‐1
Notes:
DM
1 10
t 1 ,Tim e (sec)
1.Duty Cycle,D =
t1
t2
2 .R θ J C = 2 .5 ° C / W
3.TJ ‐ T C = P * R θ J C (t)
4 .Rθ J C (t)=r(t) * RθJC
100
1000
2015/4/9
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMD09N08A.PDF ] | |
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