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PDF EMD04N70A Data sheet ( Hoja de datos )
| Número de pieza | EMD04N70A | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de EMD04N70A (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
700V
D
RDSON (MAX.)
3Ω
ID 4A
G
UIS, 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 3mH, ID=3A, RG=25Ω
L = 0.5mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2014/5/22
EMD04N70A
LIMITS
±30
4
2.5
16
3
13.5
2.25
30
12
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
4.2
110
UNIT
°C / W
p.1
1 page  
G a te C h a rg e C h a ra c te ris tic s
18
ID = 2 A
15
12
9
6
3
V DS =150V
300V
0
05
10 15
Q g ,G a te C h a rg e ( n C )
Maximum Safe Operating Area
100
10
R D S ( O N ) L im it
1
0.1
VG S = 10V
Single Pulse
R JC = 4.2°C/W
TA = 25°C
100μs
1ms
10ms
100ms
1s
DC
0.01
1
10 100 1000
VD S ‐ Drain‐Source Voltage( V )
10000
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
Transient Thermal Response Curve
0.001
10‐5 10‐4 10‐3 10‐2
10‐1
t 1 ,Time (sec)
1000
100
C a p a c ita n c e C h a ra c te ristic s
C is s
C o ss
10
C rss
f = 1 M H z
V GS= 0 V
1
0 5 10 15 20
V DS ‐D ra in ‐S o u rc e V o lta g e ( V )
25
Notes:
P DM
t1
1.Duty Cycle,D = t2 t1
t2
2.Rθ J C = 4.2°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J C (t)=r(t) * RθJC
1 10
100
2014/5/22
EMD04N70A
30
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMD04N70A.PDF ] | |
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