EMDE0N20F PDF даташит
Спецификация EMDE0N20F изготовлена «Excelliance MOS» и имеет функцию, называемую «Field Effect Transistor». |
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Детали детали
Номер произв | EMDE0N20F |
Описание | Field Effect Transistor |
Производители | Excelliance MOS |
логотип |
5 Pages
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
200V
D
RDSON (MAX.)
0.5Ω
ID 7A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 1mH, ID=1.5A, RG=25Ω
L = 0.5mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2015/10/12
EMDE0N20F
LIMITS
±30
7
4.5
28
1.5
1.12
0.56
44
17
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
2.8
65
UNIT
°C / W
p.1
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ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
EMDE0N20F
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage
Gate Threshold Voltage
Gate‐Body Leakage
Zero Gate Voltage Drain Current
On‐State Drain Current1
Drain‐Source On‐State Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±30V
VDS = 160V, VGS = 0V
VDS = 130V, VGS = 0V, TJ = 125 °C
VDS = 10V, VGS = 10V
VGS = 10V, ID = 3.5A
VDS = 5V, ID = 3.5A
DYNAMIC
200
3.0 4.0
7
0.4
2
5.0
±100
1
25
0.5
V
nA
A
A
Ω
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge1,2
Gate‐Source Charge1,2
Gate‐Drain Charge1,2
Turn‐On Delay Time1,2
Rise Time1,2
Turn‐Off Delay Time1,2
Fall Time1,2
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 15mV, VDS = 0V, f = 1MHz
VDS = 100V, VGS = 10V,
ID = 3.5A
VDS = 100V,
ID = 1A, VGS = 10V, RGS = 6Ω
SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Pulsed Current3
Forward Voltage1
IS
ISM
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2%
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
IF = IS, VGS = 0V
IF = 7A, dlF/dt = 100A / S
803
19
16
2.0
21.3
2.9
6
20
60
20
50
1450
0.85
7
28
1.5
pF
Ω
nC
nS
A
V
nS
C
2015/10/12
p.2
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Ordering & Marking Information:
Device Name: EMDE0N20F for TO‐220F
DE0
N20 DE0N20: Device Name
ABCDEFG
ABCDEFG: Date Code
Outline Drawing
Dimension in mm
EMDE0N20F
Dimension A A1 b b1 c c2 E L1 L2 L3 L4 ø e f g
Min.
4.20 1.95 0.50 0.90 0.45 2.34 9.70 2.70 6.48 14.80 12.50 3.00 2.35 1.18 3.13
Max.
4.90 2.96 1.05 1.50 0.80 3.20 10.36 3.80 7.50 16.30 14.50 3.60 2.75 1.90 4.00
2015/10/12
p.3
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Номер в каталоге | Описание | Производители |
EMDE0N20A | Field Effect Transistor | Excelliance MOS |
EMDE0N20C | Field Effect Transistor | Excelliance MOS |
EMDE0N20CS | Field Effect Transistor | Excelliance MOS |
EMDE0N20E | Field Effect Transistor | Excelliance MOS |
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