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PDF SUD80460E Data sheet ( Hoja de datos )
| Número de pieza | SUD80460E | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Vishay | |
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SUD80460E
Vishay Siliconix
N-Channel 150 V (D-S) 175 °C MOSFET
TO-252
Drain connected to tab
S
D
G
Top View
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = 10 V
Qg typ. (nC)
ID (A)
Configuration
150
0.0447
10.5
42 d
Single
FEATURES
• ThunderFET® power MOSFET
• Maximum 175 °C junction temperature
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Boost converter
• LED backlighting
• Synchronous rectification
• Power supplies
• DC/AC inverter
G
D
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
TO-252
SUD80460E-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
VDS
Gate-source voltage
Continuous drain current
TC = 25 °C
TC = 125 °C
VGS
ID
Pulsed drain current (t = 100 μs)
Continuous source-drain diode current
Single pulse avalanche current a
Single pulse avalanche energy a
Maximum power dissipation
L = 0.1 mH
TC = 25 °C
TC = 125 °C
IDM
IS
IAS
EAS
PD
Operating junction and storage temperature range
Soldering recommendations (peak temperature) c
TJ, Tstg
LIMIT
150
± 20
42 d
18.1
40
42 d
25
31.25
65.2 b
21.7 b
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient (PCB mount) c
Maximum junction-to-case (drain)
Steady state
Notes
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR4 material).
d. Package limited.
SYMBOL
RthJA
RthJC
MAXIMUM
50
2.3
UNIT
°C/W
S16-2150-Rev. A, 17-Oct-16
1
Document Number: 76248
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
28
10000
21
1000
14
100
7
0 10
0 25 50 75 100 125 150 175
TC - Case Temperature (°C)
2nd line
Current Derating a
SUD80460E
Vishay Siliconix
200
ID = 1 mA
190
Axis Title
180
170
10000
1000
100
100
10 25 °C
150 °C
160
-50 -25
10
0 25 50 75 100 125 150 175
TJ - Temperature (°C)
2nd line
Drain Source Breakdown vs. Junction Temperature
1
0.000001 0.00001
0.0001
Time (s)
2nd line
0.001
IDAV vs. Time
0.01
Note
a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-2150-Rev. A, 17-Oct-16
5
Document Number: 76248
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SUD80460E.PDF ] | |
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