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SUA70090E PDF даташит

Спецификация SUA70090E изготовлена ​​​​«Vishay» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв SUA70090E
Описание N-Channel MOSFET
Производители Vishay
логотип Vishay логотип 

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SUA70090E Даташит, Описание, Даташиты
www.vishay.com
SUA70090E
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () MAX.
0.0093 at VGS = 10 V
100
0.0100 at VGS = 7.5 V
ID (A)
42.8
33
Qg (TYP.)
33 nC
Thin-Lead TO-220 FULLPAK
G DS
Ordering Information:
SUA70090E-E3 (lead (Pb)-free and halogen-free)
FEATURES
• ThunderFET® power MOSFET
• Qgd / Qgs ratio < 1 optimizes switching
characteristics
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please
see www.vishay.com/doc?99912
APPLICATIONS
• Power supply
- Secondary synchronous rectification
• DC/DC converter
• Power tools
• Motor drive switch
• DC/AC inverter
G
D
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 100 μs)
TC = 25 °C
TC = 70 °C
ID
IDM
Avalanche Current
Single Avalanche Energy a
Maximum Power Dissipation a
L = 0.1 mH
TC = 25 °C
TC = 70 °C
IAS
EAS
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
100
± 20
42.8
34.2
120
40
80
35.7
22.9
-55 to +150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient (PCB Mount) b
Junction-to-Case (Drain)
Notes
a. Duty cycle 1 %.
b. When mounted on 1" square PCB (FR4 material).
SYMBOL
RthJA
RthJC
LIMIT
60
3.5
UNIT
°C/W
S16-0163-Rev. A, 01-Feb-16
1
Document Number: 65438
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









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SUA70090E Даташит, Описание, Даташиты
www.vishay.com
SUA70090E
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance a
Dynamic b
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 20 V
VDS = 100 V, VGS = 0 V
VDS = 100 V, VGS = 0 V, TJ = 125 °C
VDS = 100 V, VGS = 0 V, TJ = 175 °C
VDS 10 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 7.5 V, ID = 15 A
VDS = 15 V, ID = 10 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = 50 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge c
Qg
Gate-Source Charge c
Qgs VDS = 50 V, VGS = 10 V, ID = 20 A
Gate-Drain Charge c
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time c
td(on)
Rise Time c
Turn-Off Delay Time c
tr
td(off)
VDD = 50 V, RL = 5
ID 10 A, VGEN = 10 V, Rg = 1
Fall Time c
tf
Drain-Source Body Diode Ratings and Characteristics b (TC = 25 °C)
Pulsed Current (t = 100 μs)
ISM
Forward Voltage a
VSD IF = 10 A, VGS = 0 V
Reverse Recovery Time
trr
Peak Reverse Recovery Charge
IRM(REC)
IF = -10 A, dI/dt = 100 A/μs
Reverse Recovery Charge
Qrr
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
MIN.
TYP.
MAX.
UNIT
100 -
-
V
2-4
-
-
± 250
nA
- -1
μA
- - 150
- - 5 mA
50 - - A
- 0.0077 0.0093
- 0.0083 0.0100
- 38 -
S
- 1950 -
- 845 -
- 54 -
- 33 50
- 8.8 -
- 7.5 -
0.7 3.5
7
- 15 30
- 27 54
- 36 72
- 45 90
pF
nC
ns
- - 120 A
- 0.8 1.5 V
- 77 116 ns
- 4.2 6.3 A
-
145 365
nC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-0163-Rev. A, 01-Feb-16
2
Document Number: 65438
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









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SUA70090E Даташит, Описание, Даташиты
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
SUA70090E
Vishay Siliconix
120
90
60
30
0
0
Axis Title
VGS = 10 V thru 6 V
10000
VGS = 5 V
1000
100
VGS = 4 V
1234
VDS - Drain-to-Source Voltage (V)
2nd line
Output Characteristics
10
5
Axis Title
100 10000
75
50
25
0
0
TC = 25 °C
TC = 125 °C
TC = -55 °C
246
VGS - Gate-to-Source Voltage (V)
2nd line
Transfer Characteristics
1000
100
10
8
0.015
Axis Title
10000
0.012
0.009
0.006
0.003
VGS = 7.5 V
1000
VGS = 10 V
100
0 10
0 30 60 90 120
ID - Drain Current (A)
2nd line
On-Resistance vs. Drain Current
3600
3000
2400
1800
1200
600
0
0
Axis Title
10000
1000
Ciss
Coss
100
Crss
20 40 60 80
VDS - Drain-to-Source Voltage (V)
2nd line
10
100
Capacitance
10
ID = 15 A
VDS = 30 V
8
Axis Title
6
4
2
0
0 7 14 21 28
Qg - Total Gate Charge (nC)
2nd line
Gate Charge
10000
1000
100
10
35
Axis Title
60 10000
TC = -55 °C
45 TC = 25 °C
1000
30
TC = 125 °C
100
15
0 10
0 3.0 6.0 9.0 12.0 15.0
ID - Drain Current (A)
2nd line
Transconductance
S16-0163-Rev. A, 01-Feb-16
3
Document Number: 65438
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000










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