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SQM60030E PDF даташит

Спецификация SQM60030E изготовлена ​​​​«Vishay» и имеет функцию, называемую «Automotive N-Channel MOSFET».

Детали детали

Номер произв SQM60030E
Описание Automotive N-Channel MOSFET
Производители Vishay
логотип Vishay логотип 

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SQM60030E Даташит, Описание, Даташиты
www.vishay.com
SQM60030E
Vishay Siliconix
Automotive N-Channel 80 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
ID (A)
Configuration
TO-263
80
0.0032
120
Single
D
FEATURES
• TrenchFET® power MOSFET
• Package with low thermal resistance
• AEC-Q101 qualified d
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
G
Top View
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
TO-263
SQM60030-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Continuous Source Current (Diode Conduction) a
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
80
± 20
120
120
120
250
70
245
375
125
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
PCB Mount c
SYMBOL
RthJA
RthJC
LIMIT
40
0.4
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S15-2916-Rev. A, 14-Dec-15
1
Document Number: 67284
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









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SQM60030E Даташит, Описание, Даташиты
www.vishay.com
SQM60030E
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance b
Dynamic b
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0, ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = 80 V
VGS = 0 V
VDS = 80 V, TJ = 125 °C
VGS = 0 V
VDS = 80 V, TJ = 175 °C
VGS = 10 V
VDS 5 V
VGS = 10 V
ID = 30 A
VGS = 10 V
ID = 30 A, TJ = 125 °C
VGS = 10 V
ID = 30 A, TJ = 175 °C
VDS = 15 V, ID = 30 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge c
Qg
Gate-Source Charge c
Qgs
Gate-Drain Charge c
Qgd
Gate Resistance
Rg
Turn-On Delay Time c
td(on)
Rise Time c
tr
Turn-Off Delay Time c
td(off)
Fall Time c
tf
Source-Drain Diode Ratings and Characteristics b
VGS = 0 V
VDS = 25 V, f = 1 MHz
VGS = 10 V
VDS = 40 V, ID = 80 A
f = 1 MHz
VDD = 40 V, RL = 0.5
ID 80 A, VGEN = 10 V, Rg = 1
Pulsed Current a
Forward Voltage
ISM
VSD IF = 80 A, VGS = 0 V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
MIN. TYP. MAX. UNIT
80 -
-
V
2.5 3 3.5
- - ± 100 nA
- -1
- - 50 μA
- - 800
120 -
-A
- 0.0026 0.0032
- - 0.0051
- - 0.0062
- 105 -
S
- 9500 12 000
- 3300 4500 pF
- 310 400
- 110 165
- 35 - nC
- 15 -
0.7 1.45 2.2
- 19 30
- 13 20
ns
- 39 60
- 9 15
- - 250 A
-
0.9 1.5
V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-2916-Rev. A, 14-Dec-15
2
Document Number: 67284
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









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SQM60030E Даташит, Описание, Даташиты
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
160
VGS = 10 V thru 6 V
VGS = 5 V
120
128 96
SQM60030E
Vishay Siliconix
96 72
64
32
0
0
200
VGS = 4 V
2468
VDS - Drain-to-Source Voltage (V)
Output Characteristics
10
48
24
0
0
TC = 25°C
TC = 125°C
TC = - 55°C
2468
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
10
0.010
160
TC = 25 °C
TC = - 55 °C
120
0.008
0.006
80
TC = 125 °C
0.004
VGS = 10 V
40 0.002
0
0
12000
9600
7200
8 16 24 32
ID - Drain Current (A)
Transconductance
40
Ciss
0.000
0
20 40 60 80 100
ID - Drain Current (A)
On-Resistance vs. Drain Current
120
10
ID = 80 A
VDS = 40 V
8
6
4800
2400
Coss
4
2
Crss
0
0 16 32 48 64 80
VDS - Drain-to-Source Voltage (V)
0
0 25 50 75 100 125
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
S15-2916-Rev. A, 14-Dec-15
3
Document Number: 67284
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000










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Номер в каталогеОписаниеПроизводители
SQM60030EAutomotive N-Channel MOSFETVishay
Vishay

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