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SQM40010EL PDF даташит

Спецификация SQM40010EL изготовлена ​​​​«Vishay» и имеет функцию, называемую «Automotive N-Channel MOSFET».

Детали детали

Номер произв SQM40010EL
Описание Automotive N-Channel MOSFET
Производители Vishay
логотип Vishay логотип 

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SQM40010EL Даташит, Описание, Даташиты
www.vishay.com
SQM40010EL
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
ID (A)
Configuration
TO-263
40
0.0016
0.0019
120
Single
D
FEATURES
• TrenchFET® power MOSFET
• Package with low thermal resistance
• 100 % Rg and UIS tested
• AEC-Q101 qualified d
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
G
Top View
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
TO-263
SQM40010EL-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Continuous Source Current (Diode Conduction) a
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
40
± 20
120
120
120
300
80
320
375
125
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
PCB Mount c
SYMBOL
RthJA
RthJC
LIMIT
40
0.4
UNIT
°C/W
S15-2917-Rev. A, 14-Dec-15
1
Document Number: 69430
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









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SQM40010EL Даташит, Описание, Даташиты
www.vishay.com
SQM40010EL
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 μA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance b
Dynamic b
IGSS
IDSS
ID(on)
RDS(on)
gfs
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = 40 V
VGS = 0 V
VDS = 40 V, TJ = 125 °C
VGS = 0 V
VDS = 40 V, TJ = 175 °C
VGS = 10 V
VDS 5 V
VGS = 10 V
ID = 30 A
VGS = 10 V
ID = 30 A, TJ = 125 °C
VGS = 10 V
ID = 30 A, TJ = 175 °C
VGS = 4.5 V
ID = 20 A
VDS = 15 V, ID = 30 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V
VDS = 20 V, f = 1 MHz
Reverse Transfer Capacitance
Total Gate Charge c
Gate-Source Charge c
Crss
Qg
Qgs
VGS = 10 V
VDS = 20 V, ID = 100 A
Gate-Drain Charge c
Qgd
Gate Resistance
Turn-On Delay Time c
Rg
td(on)
f = 1 MHz
Rise Time c
tr
Turn-Off Delay Time c
td(off)
Fall Time c
tf
Source-Drain Diode Ratings and Characteristics b
VDD = 20 V, RL = 0.2
ID 100 A, VGEN = 10 V, Rg = 1
Pulsed Current a
ISM
Forward Voltage
VSD IF = 70 A, VGS = 0 V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
MIN. TYP. MAX. UNIT
40 -
-
V
1.5 2.0 2.5
- - ± 100 nA
- -1
μA
- - 50
- - 2 mA
120 -
-A
- 0.00121 0.00160
- - 0.00250
- - 0.00280
- 0.00145 0.00190
- 174 - S
- 13 630 17 100
- 8660 10 900 pF
- 1460 1900
- 150 230
- 30 - nC
- 12 -
0.8 1.62 2.5
- 14 25
- 20 30
ns
- 60 90
- 14 25
- - 300 A
-
0.85 1.5
V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-2917-Rev. A, 14-Dec-15
2
Document Number: 69430
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









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SQM40010EL Даташит, Описание, Даташиты
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
200
VGS = 10 V thru 4 V
160
160 128
SQM40010EL
Vishay Siliconix
120 96
80
40
0
0
300
240
180
120
60
0
0
30000
VGS = 3 V
2468
VDS - Drain-to-Source Voltage (V)
Output Characteristics
10
TC = 25 °C
TC = - 55 °C
TC = 125 °C
10 20 30 40
ID - Drain Current (A)
Transconductance
50
64
TC = 125 °C
32
TC = 25 °C
TC = - 55 °C
0
02468
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.005
10
0.004
0.003
0.002
0.001
VGS = 4.5 V
VGS = 10 V
0.000
0
20 40 60 80 100
ID - Drain Current (A)
On-Resistance vs. Drain Current
120
10
24000
8
18000
12000
Coss
Ciss
ID = 100 A
6 VDS = 20 V
4
6000
0
0
Crss
8 16 24 32
VDS - Drain-to-Source Voltage (V)
Capacitance
40
2
0
0 40 80 120 160 200
Qg - Total Gate Charge (nC)
Gate Charge
S15-2917-Rev. A, 14-Dec-15
3
Document Number: 69430
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000










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Номер в каталогеОписаниеПроизводители
SQM40010ELAutomotive N-Channel MOSFETVishay
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