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SQJQ904E PDF даташит

Спецификация SQJQ904E изготовлена ​​​​«Vishay» и имеет функцию, называемую «Automotive Dual N-Channel MOSFET».

Детали детали

Номер произв SQJQ904E
Описание Automotive Dual N-Channel MOSFET
Производители Vishay
логотип Vishay логотип 

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SQJQ904E Даташит, Описание, Даташиты
www.vishay.com
SQJQ904E
Vishay Siliconix
Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET
PowerPAK® 8 x 8L Dual
1
Top View
8.1 mm
D1
D2
1
2 G1
3 S1
4 S2
G2
Bottom View
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D1 D2
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
ID (A) per leg
Configuration
Package
40
0.0034
100
Dual
PowerPAK 8 x 8L
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current
Continuous source current (diode conduction) a
Pulsed drain current b
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation b
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
TC = 25 °Ca
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
40
± 20
100
64
100
300
50
125
75
25
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount c
SYMBOL
RthJA
RthJC
LIMIT
85
2
UNIT
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 8 x 8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S17-0256-Rev. A, 20-Feb-17
1
Document Number: 68442
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









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SQJQ904E Даташит, Описание, Даташиты
www.vishay.com
SQJQ904E
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-source breakdown voltage
VDS
VGS = 0, ID = 250 μA
Gate-source threshold voltage
VGS(th)
VDS = VGS, ID = 250 μA
Gate-source leakage
IGSS VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = 20 V
Zero gate voltage drain current
IDSS
VGS = 0 V
VDS = 40 V, TJ = 125 °C
On-state drain current a
ID(on)
VGS = 0 V
VGS = 10 V
VDS = 40 V, TJ = 175 °C
VDS 5 V
Drain-source on-state resistance a
Forward transconductance b
Dynamic b
RDS(on)
gfs
VGS = 10 V
ID = 20 A
VGS = 10 V
ID = 20 A, TJ = 125 °C
VGS = 10 V
ID = 20 A, TJ = 175 °C
VDS = 15 V, ID = 15 A
Input capacitance
Ciss
Output capacitance
Coss
VGS = 0 V
VDS = 20 V, f = 1 MHz
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Rg
Turn-on delay time c
td(on)
Rise time c
tr
Turn-off delay time c
td(off)
Fall time c
tf
Source-Drain Diode Ratings and Characteristics b
VGS = 10 V
VDS = 20 V, ID = 40 A
f = 1 MHz
VDD = 20 V, RL = 0.5
ID 40 A, VGEN = 10 V, Rg = 1
Pulsed current a
ISM
Forward voltage
VSD IF = 40 A, VGS = 0
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
MIN. TYP. MAX. UNIT
40 -
-
V
2.5 3 3.5
- - ± 100 nA
- -1
- - 50 μA
- - 150
40 -
-A
- 0.0029 0.0034
- - 0.0074
- - 0.0091
- 80 - S
- 4530 5900
- 2750 3300 pF
- 168 220
- 60 75
- 16 - nC
- 5-
0.5 1
2
- 15.5 20
- 4.6 6.2
ns
- 30 38
- 47
- - 200 A
- 1 1.5 V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-0256-Rev. A, 20-Feb-17
2
Document Number: 68442
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









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SQJQ904E Даташит, Описание, Даташиты
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
SQJQ904E
Vishay Siliconix
Axis Title
150 10000
Axis Title
80 10000
120
VGS = 10 V thru 5 V
1000
90
60
30
0
0
100
VGS = 4 V
6 12 18 24
VDS - Drain-to-Source Voltage (V)
2nd line
10
30
Output Characteristics
64
48
TC = 25 °C
32
16
0
0
TC = 125 °C
TC = -55 °C
2468
VGS - Gate-to-Source Voltage (V)
2nd line
Transfer Characteristics
1000
100
10
10
120
100
80
60
40
20
0
0
Axis Title
TC = -55 °C
TC = 25 °C
10000
1000
TC = 125 °C
100
3 6 9 12
ID - Drain Current (A)
2nd line
Transconductance
10
15
0.010
Axis Title
10000
0.008
0.006
1000
0.004
0.002
0.000
0
VGS = 4.5 V
100
VGS = 10 V
10
20 40 60 80 100 120
ID - Drain Current (A)
2nd line
On-Resistance vs. Drain Current
Axis Title
10 10000
8
6
4 TC = 25 °C
2
TC = 125 °C
TC = -55 °C
0
02468
VGS - Gate-to-Source Voltage (V)
2nd line
Transfer Characteristics
1000
100
10
10
10
ID = 15 A
8 VDS = 20 V
Axis Title
6
10000
1000
4
100
2
0 10
0 20 40 60 80 100
Qg - Total Gate Charge (nC)
2nd line
Gate Charge
S17-0256-Rev. A, 20-Feb-17
3
Document Number: 68442
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000










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Номер в каталогеОписаниеПроизводители
SQJQ904EAutomotive Dual N-Channel MOSFETVishay
Vishay

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