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SQJQ100E PDF даташит

Спецификация SQJQ100E изготовлена ​​​​«Vishay» и имеет функцию, называемую «Automotive Dual N-Channel MOSFET».

Детали детали

Номер произв SQJQ100E
Описание Automotive Dual N-Channel MOSFET
Производители Vishay
логотип Vishay логотип 

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SQJQ100E Даташит, Описание, Даташиты
www.vishay.com
SQJQ100E
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PowerPAK® 8 x 8L Single
1
Top View
8.1 mm
D
1
2G
3S
4S
S
Bottom View
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Thin 1.9 mm height
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
ID (A)
Configuration
Package
40
0.0015
200
Single
PowerPAK 8 x 8L
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current
Continuous source current (diode conduction)
Pulsed drain current b
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
TC = 25 °C a
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
40
± 20
200
141
136
600
70
245
150
50
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-ambient
Junction-to-case (drain)
PCB mount c
RthJA
50
°C/W
RthJC
1
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 8 x 8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S17-0228-Rev. A, 13-Feb-17
1
Document Number: 71828
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









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SQJQ100E Даташит, Описание, Даташиты
www.vishay.com
SQJQ100E
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance b
Dynamic b
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0, ID = 250 μA
VDS = VGS, ID = 250 μA
40 -
2.5 3
-
V
3.5
VDS = 0 V, VGS = ± 20 V
- - ± 100 nA
VGS = 0 V
VDS = 40 V
-- 1
VGS = 0 V
VDS = 40 V, TJ = 125 °C
-
-
50 μA
VGS = 0 V
VDS = 40 V, TJ = 175 °C
-
- 500
VGS = 10 V
VDS 5 V
100 -
-A
VGS = 10 V
ID = 20 A
- 0.0011 0.0015
VGS = 10 V
ID = 20 A, TJ = 125 °C
-
- 0.0021
VGS = 10 V
ID = 20 A, TJ = 175 °C
-
- 0.0025
VDS = 15 V, ID = 15 A
- 122 - S
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Rg
Turn-on delay time c
td(on)
Rise time c
tr
Turn-off delay time c
td(off)
Fall time c
tf
Source-Drain Diode Ratings and Characteristics b
VGS = 0 V
VDS = 25 V, f = 1 MHz
VGS = 10 V
VDS = 20 V, ID = 10 A
f = 1 MHz
VDD = 20 V, RL = 2
ID 10 A, VGEN = 10 V, Rg = 1
- 11 367 14 780
-
6000
7800
pF
- 615 800
- 125 165
- 35
- nC
- 13
-
0.45 0.99 1.50
- 22 32
- 8 14
ns
- 52 73
- 14 20
Pulsed current a
Forward voltage
ISM - - 200 A
VSD
IF = 50 A, VGS = 0 V
- 0.8 1.1 V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-0228-Rev. A, 13-Feb-17
2
Document Number: 71828
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









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SQJQ100E Даташит, Описание, Даташиты
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
SQJQ100E
Vishay Siliconix
Axis Title
200
VGS = 10 V thru 5 V
160
120
10000
1000
80
100
VGS = 4 V
40
0 10
0 6 12 18 24 30
VDS - Drain-to-Source Voltage (V)
2nd line
Output Characteristics
Axis Title
120
100
80
TC = 25 °C
60
40
20 TC = 125 °C
TC = -55 °C
0
02468
VGS - Gate-to-Source Voltage (V)
2nd line
Transfer Characteristics
10000
1000
100
10
10
Axis Title
1.2
1.0
0.8
0.6
TC = 25 °C
0.4
0.2 TC = 125 °C
TC = -55 °C
0.0
02468
VGS - Gate-to-Source Voltage (V)
2nd line
Transfer Characteristics
10000
1000
100
10
10
150
120
90
60
30
0
0
Axis Title
TC = 25 °C
TC = -55 °C
10000
1000
TC = 125 °C
100
3 6 9 12
ID - Drain Current (A)
2nd line
Transconductance
10
15
0.005
Axis Title
10000
0.004
0.003
1000
0.002
0.001
0.000
0
VGS = 6 V
100
VGS = 10 V
20 40 60 80
ID - Drain Current (A)
2nd line
10
100
On-Resistance vs. Drain Current
20000
Axis Title
10000
16000
12000
Ciss 1000
8000
4000
0
0
Coss 100
Crss
8 16 24 32
VDS - Drain-to-Source Voltage (V)
2nd line
Capacitance
10
40
S17-0228-Rev. A, 13-Feb-17
3
Document Number: 71828
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000










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