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SQJB00EP PDF даташит

Спецификация SQJB00EP изготовлена ​​​​«Vishay» и имеет функцию, называемую «Automotive Dual N-Channel MOSFET».

Детали детали

Номер произв SQJB00EP
Описание Automotive Dual N-Channel MOSFET
Производители Vishay
логотип Vishay логотип 

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SQJB00EP Даташит, Описание, Даташиты
www.vishay.com
SQJB00EP
Vishay Siliconix
Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET
PowerPAK® SO-8L Dual
6.15 mm
1
Top View
5.13 mm
D1
D2
1
2 S1
3 G1
4 S2
G2
Bottom View
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D1 D2
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
ID (A) per leg
Configuration
Package
60
0.0130
30
Dual
PowerPAK SO-8L
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode conduction) a
Pulsed Drain Current b
TC = 25 °C a
TC = 125 °C
VGS
ID
IS
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation b
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d, e
TJ, Tstg
LIMIT
60
± 20
30
25
30
84
23
26.5
48
16
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient
Junction-to-Case (Drain)
PCB mount c
RthJA
85
°C/W
RthJC
3.1
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S16-1729-Rev. A, 29-Aug-16
1
Document Number: 76110
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









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SQJB00EP Даташит, Описание, Даташиты
www.vishay.com
SQJB00EP
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance b
Dynamic b
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = 60 V
VGS = 0 V
VDS = 60 V, TJ = 125 °C
VGS = 0 V
VDS = 60 V, TJ = 175 °C
VGS = 10 V
VDS 5 V
VGS = 10 V
ID = 10 A
VGS = 10 V
ID = 10 A, TJ = 125 °C
VGS = 10 V
ID = 10 A, TJ = 175 °C
VDS = 15 V, ID = 10 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge c
Qg
Gate-Source Charge c
Qgs
Gate-Drain Charge c
Qgd
Gate Resistance
Rg
Turn-On Delay Time c
td(on)
Rise Time c
tr
Turn-Off Delay Time c
td(off)
Fall Time c
tf
Source-Drain Diode Ratings and Characteristics b
VGS = 0 V
VDS = 25 V, f = 1 MHz
VGS = 10 V
VDS = 30 V, ID = 1.5 A
f = 1 MHz
VDD = 30 V, RL = 20
ID 1.5 A, VGEN = 10 V, Rg = 1
Pulsed Current a
Forward Voltage
ISM
VSD IF = 10 A, VGS = 0 V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
MIN. TYP. MAX. UNIT
60 -
-
V
2.5 3.0 3.5
- - ± 100 nA
- -1
- - 50 μA
- - 150
30 -
-A
- 0.0105 0.0130
- - 0.0208
- - 0.0255
- 36 - S
- 1300 1700
- 550 750 pF
- 28 40
- 20 35
- 6 - nC
- 3-
0.25 0.51 0.80
- 13 25
- 3 10
ns
- 23 40
- 22 40
- - 84 A
- 0.85 1.2 V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-1729-Rev. A, 29-Aug-16
2
Document Number: 76110
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









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SQJB00EP Даташит, Описание, Даташиты
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
SQJB00EP
Vishay Siliconix
Axis Title
100
VGS = 10 V thru 6 V
80
10000
VGS = 5 V
1000
60
Axis Title
70 10000
56
1000
42
40
20
0
0
100
VGS = 4 V
2468
VDS - Drain-to-Source Voltage (V)
2nd line
10
10
Output Characteristics
28 TC = 25 °C
14 TC = 125 °C
TC = -55 °C
0
02468
VGS - Gate-to-Source Voltage (V)
2nd line
Transfer Characteristics
100
10
10
100
80
60
40
20
0
0
Axis Title
10000
TC = 25 °C
TC = -55 °C
1000
TC = 125 °C
100
6 12 18 24
ID - Drain Current (A)
2nd line
Transconductance
10
30
0.025
Axis Title
10000
0.020
0.015
0.010
0.005
VGS = 10 V
1000
100
0.000
0
16 32 48 64
ID - Drain Current (A)
2nd line
10
80
On-Resistance vs. Drain Current
1500
1200
900
Axis Title
10000
Ciss
1000
600
300
0
0
Coss
100
Crss
15 30 45
VDS - Drain-to-Source Voltage (V)
2nd line
Capacitance
10
60
10
ID = 1.5 A
8 VDS = 30 V
Axis Title
6
4
2
0
0 5 10 15 20
Qg - Total Gate Charge (nC)
2nd line
Gate Charge
10000
1000
100
10
25
S16-1729-Rev. A, 29-Aug-16
3
Document Number: 76110
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000










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