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SQJA94EP PDF даташит

Спецификация SQJA94EP изготовлена ​​​​«Vishay» и имеет функцию, называемую «Automotive N-Channel MOSFET».

Детали детали

Номер произв SQJA94EP
Описание Automotive N-Channel MOSFET
Производители Vishay
логотип Vishay логотип 

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SQJA94EP Даташит, Описание, Даташиты
www.vishay.com
SQJA94EP
Vishay Siliconix
Automotive N-Channel 80 V (D-S) 175 °C MOSFET
PowerPAK® SO-8L Single
6.15 mm
1
Top View
5.13 mm
D
1
2S
3S
4S
G
Bottom View
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
ID (A)
Configuration
Package
80
0.0135
46
Single
PowerPAK SO-8L
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TC = 125 °C
L = 0.1 mH
ID
IS
IDM
IAS
EAS
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) c, d
TC = 25 °C
TC = 125 °C
PD
TJ, Tstg
LIMIT
80
± 20
46
26.5
50
100
27
36
55
18
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount b
SYMBOL
RthJA
RthJC
LIMIT
70
2.7
UNIT
°C/W
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR4 material).
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S16-1732-Rev. A, 29-Aug-16
1
Document Number: 75658
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









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SQJA94EP Даташит, Описание, Даташиты
www.vishay.com
SQJA94EP
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
VDS
VGS(th)
VGS = 0, ID = 250 μA
VDS = VGS, ID = 250 μA
80 -
-
V
2.5 3.0 3.5
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = 80 V
- - ± 100 nA
- -1
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
VDS = 80 V, TJ = 125 °C
-
- 50 μA
On-State Drain Current a
ID(on)
VGS = 0 V
VGS = 10 V
VDS = 80 V, TJ = 175 °C
VDS 5 V
-
30
- 150
- -A
Drain-Source On-State Resistance a
Forward Transconductance b
Dynamic b
RDS(on)
gfs
VGS = 10 V
ID = 10 A
VGS = 10 V
ID = 10 A, TJ = 125 °C
VGS = 10 V
ID = 10 A, TJ = 175 °C
VDS = 15 V, ID = 10 A
- 0.0112 0.0135
- - 0.0208
- - 0.0254
- 40 - S
Input Capacitance
Ciss
- 1500 2000
Output Capacitance
Coss
VGS = 0 V
VDS = 25 V, f = 1 MHz
-
800 1100 pF
Reverse Transfer Capacitance
Crss
Total Gate Charge c
Qg
Gate-Source Charge c
Qgs
Gate-Drain Charge c
Qgd
Gate Resistance
Rg
Turn-On Delay Time c
td(on)
Rise Time c
tr
Turn-Off Delay Time c
td(off)
Fall Time c
tf
Source-Drain Diode Ratings and Characteristics b
VGS = 10 V
VDS = 40 V, ID = 5 A
f = 1 MHz
VDD = 40 V, RL = 8
ID 5 A, VGEN = 10 V, Rg = 1
- 32 50
- 20 35
- 6 - nC
- 3-
0.18 0.37 0.62
- 11 18
- 5 10
ns
- 23 35
- 7 15
Pulsed Current a
ISM
- - 100 A
Forward Voltage
VSD
IF = 10 A, VGS = 0
- 0.83 1.2 V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-1732-Rev. A, 29-Aug-16
2
Document Number: 75658
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









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SQJA94EP Даташит, Описание, Даташиты
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
SQJA94EP
Vishay Siliconix
100
80
60
40
20
0
0
Axis Title
VGS = 10 V thru 7 V
10000
VGS = 6 V
1000
VGS = 5 V
100
2468
VDS - Drain-to-Source Voltage (V)
2nd line
Output Characteristics
10
10
Axis Title
85 10000
68
1000
51
34
17
0
0
TC = 25 °C
TC = 125 °C
TC = -55 °C
2468
VGS - Gate-to-Source Voltage (V)
2nd line
Transfer Characteristics
100
10
10
Axis Title
0.05 10000
0.04
1000
0.03
0.02
0.01
VGS = 10 V
100
0.00
0
16 32 48 64
ID - Drain Current (A)
2nd line
10
80
On-Resistance vs. Drain Current
2000
1600
1200
800
400
0
0
Axis Title
Ciss
10000
1000
Coss
100
Crss
16 32 48 64
VDS - Drain-to-Source Voltage (V)
2nd line
Capacitance
10
80
Axis Title
10
8
ID = 5 A
VDS = 40 V
6
4
2
0
0 5 10 15 20
Qg - Total Gate Charge (nC)
2nd line
Gate Charge
10000
1000
100
10
25
2.0
ID = 10 A
1.7
1.4
Axis Title
VGS = 10 V
10000
1000
1.1
100
0.8
0.5
-50
10
-25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
S16-1732-Rev. A, 29-Aug-16
3
Document Number: 75658
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000










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