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SQJ860EP PDF даташит

Спецификация SQJ860EP изготовлена ​​​​«Vishay» и имеет функцию, называемую «Automotive N-Channel MOSFET».

Детали детали

Номер произв SQJ860EP
Описание Automotive N-Channel MOSFET
Производители Vishay
логотип Vishay логотип 

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SQJ860EP Даташит, Описание, Даташиты
www.vishay.com
SQJ860EP
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PowerPAK® SO-8L Single
6.15 mm
1
Top View
5.13 mm
D
1
2S
3S
4S
G
Bottom View
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
ID (A)
Configuration
Package
40
0.0060
0.0073
60
Single
PowerPAK SO-8L
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
TC = 25 °C a
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
40
± 20
60
36
43
120
32
51
48
16
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount c
SYMBOL
RthJA
RthJC
LIMIT
70
3.1
UNIT
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S16-1947-Rev. A, 26-Sep-16
1
Document Number: 75516
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









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SQJ860EP Даташит, Описание, Даташиты
www.vishay.com
SQJ860EP
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance b
Dynamic b
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0, ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = 40 V
VGS = 0 V
VDS = 40 V, TJ = 125 °C
VGS = 0 V
VDS = 40 V, TJ = 175 °C
VGS = 10 V
VDS 5 V
VGS = 10 V
ID = 10 A
VGS = 4.5 V
ID = 8 A
VGS = 10 V
ID = 10 A, TJ = 125 °C
VGS = 10 V
ID = 10 A, TJ = 175 °C
VDS = 15 V, ID = 10 A
40 -
-
V
1.5 2.0 2.5
- - ± 100 nA
- -1
- - 50 μA
- - 250
30 -
-A
- 0.0050 0.0060
- 0.0061 0.0073
- - 0.0099
- - 0.0122
- 78 - S
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge c
Qg
Gate-Source Charge c
Qgs
Gate-Drain Charge c
Qgd
Gate Resistance
Rg
Turn-On Delay Time c
td(on)
Rise Time c
tr
Turn-Off Delay Time c
td(off)
Fall Time c
tf
Source-Drain Diode Ratings and Characteristics b
VGS = 0 V
VDS = 25 V, f = 1 MHz
VGS = 10 V
VDS = 20 V, ID = 20 A
f = 1 MHz
VDD = 20 V, RL = 2
ID 10 A, VGEN = 10 V, Rg = 1
- 2020 2700
- 265 350 pF
- 110 150
- 34 55
- 6 - nC
- 7-
1.3 2.7 4.5
- 10 20
- 5 10
ns
- 30 50
- 5 10
Pulsed Current a
Forward Voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
Body diode peak reverse recovery current
ISM
VSD
trr
Qrr
ta
tb
IRM(REC)
IF = 10 A, VGS = 0
IF = 5 A, di/dt = 100 A/μs
- - 120 A
-
0.8 1.2
V
- 29 60 ns
- 27 60 nC
- 17 -
ns
- 11 -
- -1.8 -4 A
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-1947-Rev. A, 26-Sep-16
2
Document Number: 75516
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









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SQJ860EP Даташит, Описание, Даташиты
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
SQJ860EP
Vishay Siliconix
Axis Title
100
VGS = 10 V thru 4 V
80
60
10000
1000
40
20
0
0
100
VGS = 3 V
2468
VDS - Drain-to-Source Voltage (V)
2nd line
Output Characteristics
10
10
Axis Title
90 10000
72
54
TC = 25 °C
36
TC = 125 °C
18
TC = -55 °C
0
02468
VGS - Gate-to-Source Voltage (V)
2nd line
Transfer Characteristics
1000
100
10
10
Axis Title
150 10000
TC = -55 °C
120
TC = 25 °C
90
1000
TC = 125 °C
60
100
30
0 10
0 5 10 15 20 25
ID - Drain Current (A)
2nd line
Transconductance
0.030
Axis Title
10000
0.024
0.018
1000
0.012
0.006
0.000
0
VGS = 4.5 V
100
VGS = 10 V
10
10 20 30 40 50
ID - Drain Current (A)
2nd line
On-Resistance vs. Drain Current
3000
2400
1800
Axis Title
Ciss
10000
1000
10
ID = 20 A
8 VDS = 20 V
Axis Title
6
10000
1000
1200
600
0
0
Crss
Coss
8 16 24 32
VDS - Drain-to-Source Voltage (V)
2nd line
Capacitance
100
10
40
4
100
2
0 10
0 10 20 30 40 50
Qg - Total Gate Charge (nC)
2nd line
Gate Charge
S16-1947-Rev. A, 26-Sep-16
3
Document Number: 75516
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000










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