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PDF SQJ570EP Data sheet ( Hoja de datos )
| Número de pieza | SQJ570EP | |
| Descripción | Automotive N- and P-Channel MOSFET | |
| Fabricantes | Vishay | |
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SQJ570EP
Vishay Siliconix
Automotive N- and P-Channel 100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
N-CHANNEL P-CHANNEL
VDS (V)
RDS(on) () at VGS = ± 10 V
RDS(on) () at VGS = ± 4.5 V
ID (A)
Configuration
100 -100
0.0450
0.1460
0.0580
0.2065
15 -9.5
N- and P-Pair
Package
PowerPAK SO-8L Dual
PowerPAK® SO-8L Dual
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D1 S2
6.15 mm
1
Top View
5.13 mm
D1
D2
1
2 S1
3 G1
4 S2
G2
Bottom View
G2
G1
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
N-CHANNEL
P-CHANNEL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode conduction) a
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TC = 125 °C
L = 0.1 mH
VDS
VGS
ID
IS
IDM
IAS
EAS
100 -100
± 20
15 a -9.5
9.6 -5.5
15 -15
40 -21
13 -6
8.4 1.8
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d, e
TC = 25 °C
TC = 125 °C
PD
TJ, Tstg
27 27
99
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB mount c
SYMBOL
RthJA
RthJC
N-CHANNEL
85
5.5
P-CHANNEL
85
5.5
UNIT
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S16-1462-Rev. A, 01-Aug-16
1
Document Number: 76453
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
SQJ570EP
Vishay Siliconix
2.5
ID = 7 A
2.1
1.7
1.3
0.9
Axis Title
10000
VGS = 10 V
1000
VGS = 4.5 V
100
100
10
1
0.1
0.01
Axis Title
10000
TJ = 150 °C
TJ = 25 °C
1000
100
0.5 10
-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
0.001
0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
2nd line
10
1.2
Source Drain Diode Forward Voltage
Axis Title
0.25 10000
0.20
1000
0.15
0.10
TJ = 150 °C
100
0.05
0.00
0
TJ = 25 °C
2468
VGS - Gate-to-Source Voltage (V)
2nd line
10
10
On-Resistance vs. Gate-to-Source Voltage
Axis Title
0.5 10000
0.2
1000
-0.1
ID = 5 mA
-0.4
100
-0.7 ID = 250 μA
-1.0
-50 -25
10
0 25 50 75 100 125 150 175
TJ - Temperature (°C)
2nd line
Threshold Voltage
125
ID = 1 mA
121
117
Axis Title
10000
1000
113
100
109
105 10
-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
Drain Source Breakdown vs. Junction Temperature
Axis Title
100 10000
10 IDM limited
1
ID limited
0.1 Limited by RDS(on) (1)
100 μs
1000
1 ms
10 ms
100 ms, 1 s1, 010 s, DC
TC = 25 °C
Single pulse
0.01
0.01 0.1
BVDSS limited
1 10 100
10
1000
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
S16-1462-Rev. A, 01-Aug-16
5
Document Number: 76453
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SQJ570EP.PDF ] | |
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